Field Stop (FS) Type IGBT Transient Temperature Characteristics: E-Thermal Simulation Approach

Abstract

This research presents an electro-thermal simulation method for analyzing the transient temperature characteristics of Field Stop (FS) type Insulated Gate Bipolar Transistors (IGBTs). The method combines IGBT working principles and semiconductor physical principles to investigate the influence of internal excess carrier lifetime on the IGBT's transient temperature behavior. By conducting actual tests on an FS type IGBT switching transient working process, the research establishes an electro-thermal simulation method with improved accuracy and simplified parameter calculation.