Field Emission Properties of Single-Walled Carbon Nanotubes with a Variety of Emitter Morphologies

Shiratori, Yosuke; Furuichi, K.; Noda, Suguru; Sugime, Hisashi; Tsuji, Yoshiko; Zhang, Zhengyi; Maruyama, Shigeo; Yamaguchi, Yukio

doi:10.1143/jjap.47.4780

Cited by 19 publications

(24 citation statements)

References 27 publications

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“…However, the CNT forest emanating from the bottom surface provided more well-spaced CNTs, hence the "blossom" comparison showed excellent field emission properties. Figure 4(b) shows the TOF as 1.09 V/μm, which is in fact among the lowest TOF reported for field emitter arrays 5,15,16 and superior to the patterned CNT films (1.8 V/μm), 17 the single-walled CNT bundles (2.4 V/μm), 18 and the periodic CNT arrays (4.71 V/μm). 19 The emission mapping demonstrated a uniform distribution corresponding to the honeycomb pattern (inset in Fig.…”

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confidence: 85%

Field emission from laterally aligned carbon nanotube flower arrays for low turn-on field emission

et al. 2013

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Laterally aligned carbon nanotube (CNT) arrays “blossomed” homogeneously in honeycomb holes of a metal grid substrate were explored as rational architecture for field emission. A low turn-on field (TOF) of 1.09 V/μm for 10 μA/cm2 emission was achieved, which approaches or exceeds the lowest reported TOF values for field emitter arrays. We interpret that these lateral CNT arrays act as source of CNT “loop” arrays enabling a structure suited toward low TOF field emission.

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confidence: 85%

Field emission from laterally aligned carbon nanotube flower arrays for low turn-on field emission

et al. 2013

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“…Gaps were first formed at a red arrow position and then extended to an L gap of a few microns, whereas the other two gaps were only extended to an L gap of a few hundreds nanometers. This can be explained by field enhancement between the side walls of A-and C-SWNTs, 39 which induces the etching of adjacent A-SWNTs, as schematically shown in Fig. 4b.…”

Section: Remote Etching Among Adjacent Swntsmentioning

confidence: 99%

Field emission and anode etching during formation of length-controlled nanogaps in electrical breakdown of horizontally aligned single-walled carbon nanotubes

et al. 2016

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We observe field emission between nanogaps and voltage-driven gap extension of single-walled carbon nanotubes (SWNTs) on substrates during the electrical breakdown process. Experimental results show that the gap size is dependent on the applied voltage and humidity, which indicates high controllability of the gap size by appropriate adjustment of these parameters in accordance with the application. We propose a mechanism for the gap formation during electrical breakdown as follows. After small gaps are formed by Joule heating-induced oxidation, SWNTs on the anode side are electrochemically etched due to physically-adsorbed water from the air and the enhanced electric field at the SWNT tips. Field emission is measured in a vacuum as a possible mechanism for charge transfer at SWNT gaps. The relationship between the field enhancement factor and geometric features of SWNTs explains both the voltage dependence of the extended gap size and the field emission properties of the SWNT gaps. In addition, the similar field-induced etching can cause damage to adjacent SWNTs, which possibly deteriorates the selectivity for cutting metallic pathways in the presence of water vapor.

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“…This effect is easily reproduced on uniform CNT samples grown on larger device area by uniform catalysts. 40) Extensive research and development of CNT field emitters has focused on the individual structure of CNTs, such as single-, double-, and thin-walled CNTs. Figure 12 clearly shows, however, the importance of morphologies of their ensembles.…”

Section: Swcnt Libraries For High-throughput Preparation and Evaluatimentioning

confidence: 99%

A Simple Combinatorial Method Aiding Research on Single-Walled Carbon Nanotube Growth on Substrates

Noda

Sugime

Hasegawa

et al. 2010

Jpn. J. Appl. Phys.

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Establishing fabrication methods of carbon nanotubes (CNTs) is essential to realize many applications expected for CNTs. Catalytic growth of CNTs on substrates by chemical vapor deposition (CVD) is promising for direct fabrication of CNT devices, and catalyst nanoparticles play a crucial role in such growth. We have developed a simple method called ''combinatorial masked deposition (CMD)'', in which catalyst particles of a given series of sizes and compositions are formed on a single substrate by annealing gradient catalyst layers formed by sputtering through a mask. CMD enables preparation of hundreds of catalysts on a wafer, growth of single-walled CNTs (SWCNTs), and evaluation of SWCNT diameter distributions by automated Raman mapping in a single day. CMD helps determinations of the CVD and catalyst windows realizing millimeter-tall SWCNT forest growth in 10 min, and of growth curves for a series of catalysts in a single measurement when combined with realtime monitoring. A catalyst library prepared using CMD yields various CNTs, ranging from individuals, networks, spikes, and to forests of both SWCNTs and multi-walled CNTs, and thus can be used to efficiently evaluate self-organized CNT field emitters, for example. The CMD method is simple yet effective for research of CNT growth methods. #

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Field Emission Properties of Single-Walled Carbon Nanotubes with a Variety of Emitter Morphologies

Abstract: Morphologically controlled SWNTs with promising emitter performances are expected to be practical electron sources.

Cited by 19 publications

References 27 publications

Field emission from laterally aligned carbon nanotube flower arrays for low turn-on field emission

Field emission from laterally aligned carbon nanotube flower arrays for low turn-on field emission

Field emission and anode etching during formation of length-controlled nanogaps in electrical breakdown of horizontally aligned single-walled carbon nanotubes

A Simple Combinatorial Method Aiding Research on Single-Walled Carbon Nanotube Growth on Substrates

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