Field Emission from Silicon Implanted with Carbon and Nitrogen Followed by Electron Beam Annealing

Abstract

Field emission has been demonstrated from silicon that has been ionimplanted with carbon and nitrogen. Self-assembled silicon nanostructures were prepared as a template on the surface of wafer silicon, prior to multiple low-energy ion implantations. Following ion implantation, the original surface nanostructuring was lost. However, after electron beam annealing, selfassembled surface nanostructures were observed. Nuclear reaction analysis and Rutherford backscattering spectrometry indicated a Si 0.6 C 0.1 N 0.3 layer extending to a depth of $120 nm. Electron emission was measured from the as-implanted and post-annealed samples. The implanted and annealed sample showed a low turn-on field of 10 V/lm compared with 44 V/lm for the as-implanted sample.