Field-effect transistors made from solution-grown two-dimensional tellurene

Abstract

The reliable production of two-dimensional crystals is essential for the development of new technologies based on 2D materials. However, current synthesis methods suffer from a variety of drawbacks, including limitations in crystal size and stability. Here, we report the fabrication of large-area, high-quality 2D tellurium (tellurene) using a substrate-free solution process. Our approach can create crystals with a process-tunable thickness, from monolayer to tens of nanometres, and with lateral sizes of up to 100 µm. The chiral-chain van der Waals structure of tellurene gives rise to strong in-plane anisotropic properties and large thicknessdependent shifts in Raman vibrational modes, which is not observed in other 2D layered materials. We also fabricate tellurene field-effect transistors, which exhibit air-stable performance at room temperature for over two months, on/off ratios on the order of 10 6 and field-effect mobilities of around 700 cm 2 /Vs. Furthermore, by scaling down the channel length and integrating with high-k dielectrics, transistors with a significant on-state current density of 1 A/mm are demonstrated. MainThe continuing development of two-dimensional materials, be it the exploration of new science 1-3 or the implementation of new technologies 4-8 , requires reliable methods of synthesising 2D crystals. Whether current approaches can be scaled up though remains uncertain 9,10 and are restricted by factors such as growth substrates and conditions 11-13 , small crystal sizes 14 and the instability of the synthesized materials 11,15,16 .

Design, Performance, and Application of Thermoelectric Nanogenerators

“…Sb‐doped and Al‐doped ZnO can further enhance the TE properties of ZnO and have high comprehensive properties, which can contribute to improved performance of TEGs and expand their application fields. Tellurium (Te) is a silver‐white metalloid and found as hexagonal nonmetallic crystals with low thermal conductivity, high power factor, and excellent TE properties . Lin, Pei, and coworkers found that Te nanowires and nanosheets exhibit excellent TE properties owing to low thermal conductivity and high power factor induced by inherently nested valence bands in Te.…”

2D Crystal–Based Fibers: Status and Challenges

“…The resultant transistor has good stability in ambient air, with the on/off ratio of 10 6 , and the field effect mobility of 700 cm 2 V −1 s −1 . In addition, the transistor shows a bright current density of 1 A mm −1 , by reducing the length of the channel and integrating with high‐k dielectrics in proportion . Apte et al reported physical vapor deposition (PVD) and pulsed laser deposition (PLD) for the preparation of ultrathin tellurene (of atomic thickness).…”

Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide

“…[2][3][4][5][6] In particular, atomically thin monolayers have proven to be an ideal platform for the exploration of the unique features associating with 2D electronic systems such as ultrahigh mobility, [7] quantum phase transition, [8] indirect exciton condensation, [9] quantum oscillation, [10] and the quantum Hall effect. and other mono-elemental materials (e.g., black phosphorus, tellurene, etc.)…”

“…and other mono-elemental materials (e.g., black phosphorus, tellurene, etc.) [3,6,12,13] Previous theoretical and experimental investigations have clearly demonstrated that the effective mass increases with bandgap energy as thickness reduced. [2][3][4][5][6] In particular, atomically thin monolayers have proven to be an ideal platform for the exploration of the unique features associating with 2D electronic systems such as ultrahigh mobility, [7] quantum phase transition, [8] indirect exciton condensation, [9] quantum oscillation, [10] and the quantum Hall effect.…”