Fiber grating sensing interrogation based on an InGaAs photodiode linear array

Li, Guoyu; Guo, Tuan; Zhang, Hao; Gao, Hongwei; Zhang, Jian; Liao, Bo; Yuan, Shuzhong; Kai, Guiyun; Dong, Xinyong

doi:10.1364/ao.46.000283

Cited by 9 publications

(5 citation statements)

References 8 publications

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“…[6][7][8][9][10][11][12][13] Traditional broadband photodetectors are prepared from inorganic semiconductor materials (such as Si, MoS 2 and InGaAs), whereas, the materials are expensive and the manufacturing process is complicated. 14,15 Compared to inorganic semiconductors, organic small-molecule semiconductor have attracted considerable attentions in optical detection applications, because of their costeffectiveness, flexibility, amenability to roll-to-roll large area producing, compatibility with plastic substrates, tunable molecular structures, and broader light range response. 13,[16][17][18][19][20] Fullerene (C 60 ), as an electron acceptor with fast photoinduced charge transfer properties is a promising candidate for organic photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Molecular engineering for high-performance fullerene broadband photodetectors

et al. 2021

Nanoscale Adv.

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Section: Introductionmentioning

confidence: 99%

Molecular engineering for high-performance fullerene broadband photodetectors

et al. 2021

Nanoscale Adv.

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“…The base material substrate is InP and is formed by controlling the composition ratio of In and Ga to lattice match with this InP. The bandgap energy Eg of InGaAs is 0.87 eV, and photoelectric conversion of 1550 nm light, which is a communication wavelength band, can be executed [10]. Therefore, it is now used as a detector material in optical communication technology [11].…”

Section: Introductionmentioning

confidence: 99%

HOLE ACCUMULATION EFFECT OF InGaAs HIGH-ELECTRON-MOBILITY TRANSISTORS WITH A 1550-nm WAVELENGTH FEMTOSECOND PULSE LASER

Kozakai¹

2019

GEOMATE

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InGaAs is known as a material system with high electron mobility derived from InAs and can be formed by metal organic chemical vapor deposition. The base material substrate is InP and is formed by controlling the composition ratio of In and Ga to lattice match with this InP. The bandgap energy Eg of InGaAs is 0.87 eV, and photoelectric conversion of 1550-nm light, which is a communication wavelength band, can be executed. Therefore, it is now used as a detector material in optical communication technology. In this study, we investigated the photoresponsive properties of InGaAs high-electron-mobility transistors (HEMTs) with simultaneous utilization of photoresponse characteristics and high-frequency response characteristics of this InGaAs crystal. A 1550-nm wavelength femtosecond pulse laser (with a pulse width of 100 fs and a period of 50 MHz) was coupled with DC light with a wavelength of 1480 nm and irradiated from the InGaAs HEMT metal electrode surface. Laser light transmitted through the side of the gate metal electrode into the device structure generates electron-hole pairs via the photoelectric effect in the InGaAs layer, and it was confirmed that the maximum drain current of 0.4 mA was reduced. A current response is detected inside the semiconductor by transporting electrons to the drain electrode side and holes to the source electrode side. Because the laser used is pulsed light, the process of generation and disappearance of electron-hole pairs were confirmed as photoresponsive properties.

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“…For instance, commercial photodiodes are typically based on silicon (Si) and indium gallium arsenide (InGaAs), which are mostly applied in NIR (near‐infrared) detection . However, as we know, silicon photodiode has a relatively weak responsivity in the UV (ultraviolet) and visible regimes …”

Section: Introductionmentioning

confidence: 99%

Toward High Uniformity of Photoresponse Broadband Hybrid Organic–Inorganic Photodiode Based on PVP‐Modified Perovskite

Zhao

Luo

et al. 2017

Advanced Optical Materials

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Broadband photodiode based on Si/perovskite structure that combines the advantages of both silicon and perovskite is presented in this paper. This study addresses the issue of the absent of ultraviolet absorption of silicon and the near‐infrared absorption of perovskite. More significantly, the polyvinyl pyrrolidone (PVP) modification process on the perovskite film shows efficiency on morphology and crystallizing control that are important for high uniformity of responsivity and reproducibility. The result shows high spectral uniformity of responsivity (uSR = 0.85) on a wide spectrum ranging from 405 to 808 nm and the average of deviation of reproducibility is only 2.1%. Fast response time (645 µs), good on–off switching performance, and high photosensitivity (Ion/Ioff = 1322) of the as‐fabricated device are also achieved in this work. This research indicates that the high‐performance broadband photodiode can be realized by the novel organic–inorganic structure and PVP modification without compromising any of its performance.

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Fiber grating sensing interrogation based on an InGaAs photodiode linear array

Cited by 9 publications

References 8 publications

Molecular engineering for high-performance fullerene broadband photodetectors

Molecular engineering for high-performance fullerene broadband photodetectors

HOLE ACCUMULATION EFFECT OF InGaAs HIGH-ELECTRON-MOBILITY TRANSISTORS WITH A 1550-nm WAVELENGTH FEMTOSECOND PULSE LASER

Toward High Uniformity of Photoresponse Broadband Hybrid Organic–Inorganic Photodiode Based on PVP‐Modified Perovskite

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