Ferroelectric domain triggers the charge modulation in semiconductors (invited)

Morozovska, Anna N.; Eliseev, Eugene A.; Ievlev, Anton V.; Varenyk, Olexander V.; Pusenkova, Anastasiia; Chu, Ying Hao; Shur, V. Ya.; Стріха, М. В.; Kalinin, Sergei V.

doi:10.1063/1.4891310

Cited by 18 publications

(16 citation statements)

References 48 publications

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“…23. Here, the depolarization field created by a cylindrical domain in the system 'ferroelectric surface/tip/water meniscus' is much smaller than in the dry conditions and has maxima at definite distance from the domain wall (DW; details of the field calculations are listed in refs 23,42), that is, in a ring around existing domain to the appearance of the screening charge ring (see Fig. 4c,d).…”

Section: Resultsmentioning

confidence: 99%

Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

et al. 2014

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Electric field-induced polarization switching underpins most functional applications of ferroelectric materials in information technology, materials science and optoelectronics. Recently, much attention has been focused on the switching of individual domains using scanning probe microscopy. The classical picture of tip-induced switching, including formation of cylindrical domains with size, is largely determined by the field distribution and domain wall motion kinetics. The polarization screening is recognized as a necessary precondition to the stability of ferroelectric phase; however, screening processes are generally considered to be uniformly efficient and not leading to changes in switching behaviour. Here we demonstrate that single-point tip-induced polarization switching can give rise to a surprisingly broad range of domain morphologies, including radial and angular instabilities. These behaviours are traced to the surface screening charge dynamics, which in some cases can even give rise to anomalous switching against the electric field (ionic field effect).

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Section: Resultsmentioning

confidence: 99%

Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

et al. 2014

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“…27,30 Existence of the residual depolarization field E rd = E dep -E scr can be attributed to gradient of the spontaneous polarization near the surface which can be taken into consideration by including an effective uniform surface dielectric layer ("dielectric gap" or "dead-layer"). [32][33][34][35] Effective dielectric layer of thickness H appears on the ferroelectric surface in the uniform approximation; and its "effective" dielectric properties, determined as the average values, could be different from the ferroelectric bulk (Fig. 6a).…”

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confidence: 99%

Ferroelectric switching by the grounded scanning probe microscopy tip

et al. 2015

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Polarization reversal in ferroelectrics by the tip of scanning probe microscope was intensively studied for last two decades. In addition to classical domain formation and growth, a number of abnormal switching phenomena have been reported. In particularly, it was experimentally and theoretically shown that slow dynamics of the surface screening can control the kinetics of the ferroelectric switching, and result in backswitching and relaxation phenomena. Here, we experimentally demonstrated the practical possibility of the history dependent polarization reversal by the grounded SPM tip. This phenomenon was attributed to the induction of the slowly dissipating charges into the surface, which in the presence of the grounded tip induce polarization reversal. Analytical and numerical electrostatic calculations allow additional insight into the mechanisms of the observed phenomena. 3Piezoresponse force microscopy (PFM) is one of the most popular techniques used for the complex investigations of the ferroelectric materials, allowing visualization of the static ferroelectric domain structures. [1][2][3] At the same time application of the electric field through conductive tip opens a pathway for manipulation with the domain structures on the nanoscale. 4, 5The process of the polarization reversal under the action of the electric field produced by the SPM tip was carefully studied by multiple scientific groups worldwide. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] Abnormal switching behaviors, including backswitching, 12,15,[21][22][23] polarization reversal by the "wrong" polarity of the switching voltage 7,11,17,19 and switching along the path of the unbiased SPM tip 18, 24 were reported. These phenomena were attributed to the charge injection 12,15 , screening of the applied electric fields 25 and ferroelastoelectric switching. 7 Despite clear relevance to the qualitative and quantitative interpretation of PFM-derived data on polarization switching, exact origins of the observed phenomena remain poorly understood.Here we experimentally studied the process of the tip-induced polarization reversal in the vicinity of the flat domain wall in the thin periodically poled LiNbO 3 single crystal.Investigations demonstrated unexpected pronounced switching along the path of the grounded SPM tip at distances above 1 μm from the point of the field application. This switching led to the formation of sharp spikes on the initial flat domain wall and nanodomain chains. The obtained results were explained in terms of the spatial distribution of the electric field produced by freshly switched domains and grounded SPM tip. Analytical and numerical calculations of the electric field distribution showed presence of the pronounced induced electric field into the tip surface. Observed phenomenon allows explanation of number of the abnormal switching dynamics reported earlier. 12,15,18 However it gives rise to much wider set 4 of behaviors. For instance, it enables switching (not backswitching) by the grounded tip in th...

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“…Due to the charge separation by an electric field at the FDW-surface junction, there arise -junctions in graphene [27,28].…”

Section: Conductance Of a Graphene Channel With A -Junction At A Ferrmentioning

confidence: 99%

Influence of Domain Structure in Ferroelectric Substrate on Graphene Conductance (Authors' Review)

Стріха¹,

Kurchak²,

Morozovska³

2018

Ukr. J. Phys.

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This review is devoted to recent theoretical studies of the influence exerted by a domain structure in the ferroelectric substrate on the graphene conductance in the graphene-on-ferroelectric structure. An analytical description of the hysteresis memory effect in the field effect transistor based on this structure, which considers absorbed dipole layers on the free graphene surface and localized states at the graphene-ferroelectric interface, is considered. Some theses of a theory recently developed for the conductance of -junctions created by a 180 ∘ -ferroelectric domain structure in a single graphene layer (channel) on the ferroelectric substrate, are analyzed, and various current regimes from the ballistic to diffusion one are considered. The size effects in such systems and a possibility to apply the results obtained to improve the parameters of such devices as field effect transistors with a graphene channel, non-volatile ferroelectric memory cells with random access, and sensors, as well as to miniaturize various devices of functional nanoelectronics are discussed. K e y w o r d s: graphene-on-ferroelectric structure, domain structure, conductance, field effect transistor.

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Ferroelectric domain triggers the charge modulation in semiconductors (invited)

Cited by 18 publications

References 48 publications

Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

Ferroelectric switching by the grounded scanning probe microscopy tip

Influence of Domain Structure in Ferroelectric Substrate on Graphene Conductance (Authors' Review)

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