volume 109, issue 1, PK1-K5 1982
DOI: 10.1002/pssb.2221090150
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Abstract: The Fermi Dirac integral FU(z) of order u with the Fermi level Efn given by Efn -E = E = kTz, used to investigate the electrical properties in narrowc n gap semiconductors, has been received considerable attention for many years /1 to 4/.The aim of t h i s note is to express FU(z) in terms of F1/2(~), and give a simplified expression of En in the hrghly degenerate case.First of all, we review the expression of the electron concentration n, calculated, respectively, in the conduction-band-edge mass m approxima…

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