volume 15, issue 6, P857-858 1985
DOI: 10.1070/qe1985v015n06abeh007173
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Abstract: The influence of plastic deformation of V3Si single crystals on positron annihilation parameters (Doppler broadening of the annihilation line, positron lifetime) has been studied and the results compared with measurements of the electrical resistivity ratio 420 K). The experimental results can be explained in terms of interactions of point defects and dislocations based on the monotype model of dislocation climbing developed for intermetallic compounds and the established fact of there being a large lattice e…

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