MRS Proc. 1998 DOI: 10.1557/proc-537-g4.5 View full text
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H. Marchand, J.P. Ibbetson, P.T. Fini, X.H. Wu, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra

Abstract: AbstractWe demonstrate a two-step process wherein the lateral epitaxial growth (LEO) of GaN from <1010>-oriented stripes is initiated at a low V/II1 ratio to produce smooth, vertical {1120} sidewalls, and where the V/III ratio is subsequently raised in order to increase the lateral growth rate. We find that the formation of the {1101} facets is inhibited using this two-step process, and that it is possible to maintain the {1120} sidewalls while achieving a large lateral growth rate. The ratio of lateral …

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