Failure mechanisms of low-voltage trench power MOSFETs under repetitive avalanche conditions

Bach, K.H.; Asam, M.; Kanert, Werner

doi:10.1109/ispsd.2012.6229036

Cited by 5 publications

(2 citation statements)

References 3 publications

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“…Under high‐current avalanche, the current density in the metallisation can become very high causing significant degradation of the metal leading to increased R DS(on) [61, 62].…”

Section: Robustnessmentioning

confidence: 99%

Considerations in the design of a low‐voltage power MOSFET technology

Rutter¹

2019

IET Power Electronics

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Discrete low-voltage power metal-oxide-semiconductor field effect transistors are used in a wide variety of applications with each application relying on different aspects of device behaviour. The conflicting requirements of these applications along with constraints such as legislation, industrial base, and intellectual property have resulted in a diverse array of technologies available in the market. This study outlines the many considerations that are faced when designing a highperformance silicon power MOSFET technology contrasting the trade-offs involved as factors such as on-state resistance, switching performance, reliability, and robustness in the application are optimised. 3 Intellectual property There are ∼3000 granted US patents relating to vertical doublediffused metal-oxide-semiconductor (DMOS) devices with a trench gate (classification H01 29/7813) with the number increasing at about 300 per year. In such a fiercely competitive market, protecting intellectual property is crucial. Consideration of the

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“…Under high‐current avalanche, the current density in the metallisation can become very high causing significant degradation of the metal leading to increased R DS(on) [61, 62].…”

Section: Robustnessmentioning

confidence: 99%

Considerations in the design of a low‐voltage power MOSFET technology

Rutter¹

2019

IET Power Electronics

View full text Add to dashboard Cite

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“…In order to understand the destruction mechanism from physics investigation, numerous numerical simulation studies have been reported [1]. In addition, measured data and simulated results have been compared [2][3]. However, a simulation analysis does not have enough capability to calculate whole MOSFET units' behavior.…”

Section: Introductionmentioning

confidence: 99%

Time resolved emission observation from top surface in avalanche breakdown of power MOSFET

Endo

Norimatsu

Nakashima

et al. 2014

2014 IEEE International Reliability Physics Symposium

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Time resolved emission (TRE) microscopy can detect photons, and its signal-to-noise (S/N) ratio is higher than that of Photo Emission Microscopy under weak emission conditions. This is the first study to show the TRE observation in avalanche breakdown through thick source metal from the top surface of power MOSFET. TRE is an effective method to detect several photons, however, the strong emission range saturate the output of TRE detectors and this phenomenon disturbs accurate photon measurement. Our study results show that the photon count behavior is consistent with the oscillation of avalanche current. Also, the distribution of photon count density in the regions of the device is different, which indicates that there is distribution of current density in MOSFET. The described approach has the capacity to observe the current density distribution without any power device electrode metal removal and can be applied to measure the oscillation behavior of avalanche current.

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