Faceting and nanostructure effects in Si and SiGe epitaxy

Dutartre, D.; Seiss, Birgit; Campidelli, Y.; Pellissier-Tanon, D.; Barge, D.; Pantel, R.

doi:10.1016/j.tsf.2011.10.115

Cited by 17 publications

(20 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the narrow width device, the shape of the SiGe channel deposited in the batch tool is clearly rounded (Fig. 10b) and looks very similar to SiGe channels which were annealed in H 2 after deposition (thermally rounded) [14,15]. So these differences of the morphology between the tool platforms are likely driven by thermal rounding after deposition.…”

Section: Morphologymentioning

confidence: 89%

SiGe channel deposition by batch epitaxy

Reichel

Schoenekess

Dietel

et al. 2015

Solid-State Electronics

View full text Add to dashboard Cite

Section: Morphologymentioning

confidence: 89%

SiGe channel deposition by batch epitaxy

Reichel

Schoenekess

Dietel

et al. 2015

Solid-State Electronics

View full text Add to dashboard Cite

“…11. It has been established that, because of the significant lateral overgrowth, the effective width of the line and then the effective rate of deposition increases with time, consequently, the effective thickness th eff follows a superlinear variation with time.…”

Section: Anisotropic Loading Effectsmentioning

confidence: 99%

“…In addition, since the physics discussed in ref. 11 indicates that the sensibility varies as an important power of the size reverse, future/smaller structures will be even much more sensitive. …”

Section: Thermal Roundingmentioning

confidence: 99%

See 1 more Smart Citation

(Invited) “Small Size” Effects in Si-Based Epitaxies for Advanced CMOS Technologies

et al. 2014

Self Cite

View full text Add to dashboard Cite

Most of the Small Size Effects that take place in epitaxies used in advanced CMOS are reviewed. The most common one is the faceting that is a consequence of different deposition kinetics of the dense crystal planes. On the other hand, when considering small areas, the deposition rate is not a constant and the effective thickness depends on the pattern size and orientation. Thus, the concepts of “time-nonlinear kinetics” or “anisotropic loading effect” have been proposed. These epitaxies are also very sensitive to temperature. Thermal rounding takes place at temperatures as low as 600-625°C. Moreover, with higher thermal budgets, surface energy is capable, as a function of boundary conditions, to create instabilities such as Plateau-Rayleight ones or on the contrary to stabilize the Stranski-Krastanov ones. Finally, the importance of these mechanisms is illustrated in two CMOS applications: thermal rounding and anisotropic loading in SiGe channels and faceting in elevated sources/drains.

show abstract

“…In future nodes, the feature size continues to decrease, implying a further increase in the sensitivity of the objects towards temperature. We have recently observed that the as-deposited morphology of SiGe, which is faceted, adopts a rounded morphology under hydrogen annealing at moderate temperatures (7). At higher annealing temperatures, the formation of significant instabilities was observed (8).…”

Section: Introductionmentioning

confidence: 99%

Si-Passivation of Epitaxial SiGe: Kinetics and Impact on Morphology

Seiss

Dutartre

2013

ECS Trans.

Self Cite

View full text Add to dashboard Cite

In this work a process was developed to passivate epitaxial SiGe on Si (001) substrates by a very thin Si layer. The Si-passivation was characterized in terms of deposition kinetics and of impact on the SiGe morphology during annealing. Different passivation durations allowed determining the time-dependence of the deposited thickness. A non-linear behavior was found resulting in a non-constant growth rate which decreases rapidly during the first seconds of passivation. Concerning the morphology of annealed SiGe, we showed that it can be strongly influenced by Si-passivation. The undulations appearing due to strain relaxation decrease in amplitude with increasing passivation duration until disappearance. In contrast, the morphology observed at the pattern edge, caused by thermal rounding, was not stabilized with similar passivation and annealing conditions.

show abstract

Faceting and nanostructure effects in Si and SiGe epitaxy

Cited by 17 publications

References 6 publications

SiGe channel deposition by batch epitaxy

SiGe channel deposition by batch epitaxy

(Invited) “Small Size” Effects in Si-Based Epitaxies for Advanced CMOS Technologies

Si-Passivation of Epitaxial SiGe: Kinetics and Impact on Morphology

Contact Info

Product

Resources

About