2023
DOI: 10.1039/d3qm00496a
|View full text |Cite
|
Sign up to set email alerts
|

Fabrication strategies for high quality halide perovskite films in solar cells

Abstract: Perovskite solar cell (PVSC) has emerged as a game-changing photovoltaic technique in recent years. Remarkable advances have been realized in its efficiency, stability and large-scale fabrication techniques. High quality halide...

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
5
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
5

Relationship

2
3

Authors

Journals

citations
Cited by 5 publications
(5 citation statements)
references
References 125 publications
0
5
0
Order By: Relevance
“…Many types of 2D/3D heterogeneous perovskite structures have been reported, such as Au/PEA 2 PbBr 4 /MAPbBr 3 /PEA 2 PbBr 4 /Au for photoconductor-type x-ray detectors [31], Cr/BCP/C 60 /(FPEA) 2 PbBr 4 /FAPbBr 3 /(FPEA) 2 PbBr 4 /Au for photodiode-type x-ray detectors [11]. The formation of 2D perovskite layers on the 3D perovskite single crystal surfaces can be done in a variety of ways, such as the solution-grown epitaxial method [11], the inverse-temperature crystallization method and the wetfusing process [31][32][33]. In order to quantitatively discuss the effect of the defects at the 2D/3D interface on dark current, two device structures were utilize ed: (1) Au/PEA 2 PbI 4 /L 1 /MAPbI 3 /L 1 /PEA 2 PbI 4 /ITO, (2) Au/L 1 /MAPbI 3 /L 1 /ITO (figures 1(a), (b)).…”
Section: Device Structures and Simulation Parametersmentioning
confidence: 99%
“…Many types of 2D/3D heterogeneous perovskite structures have been reported, such as Au/PEA 2 PbBr 4 /MAPbBr 3 /PEA 2 PbBr 4 /Au for photoconductor-type x-ray detectors [31], Cr/BCP/C 60 /(FPEA) 2 PbBr 4 /FAPbBr 3 /(FPEA) 2 PbBr 4 /Au for photodiode-type x-ray detectors [11]. The formation of 2D perovskite layers on the 3D perovskite single crystal surfaces can be done in a variety of ways, such as the solution-grown epitaxial method [11], the inverse-temperature crystallization method and the wetfusing process [31][32][33]. In order to quantitatively discuss the effect of the defects at the 2D/3D interface on dark current, two device structures were utilize ed: (1) Au/PEA 2 PbI 4 /L 1 /MAPbI 3 /L 1 /PEA 2 PbI 4 /ITO, (2) Au/L 1 /MAPbI 3 /L 1 /ITO (figures 1(a), (b)).…”
Section: Device Structures and Simulation Parametersmentioning
confidence: 99%
“…6 High-quality perovskite films are the core prerequisite for preparing perovskite photovoltaic devices with excellent performance. 7 Due to the combination of organic−inorganic hybrid perovskites, weak van der Waals forces, 8 sufficient ionic migration space, 9 and loose ionic bonds in the coordination of perovskite structures lead to a large number of defects in perovskite films, such as Pb vacancies, I vacancies, and Pb−I mutual antisite substitutions. 10−13 These defects turn into nonradiative recombination centers and inhibit the transport of photogenerated carriers, decreasing device performance.…”
Section: Introductionmentioning
confidence: 99%
“…High-quality perovskite films are the core prerequisite for preparing perovskite photovoltaic devices with excellent performance . Due to the combination of organic–inorganic hybrid perovskites, weak van der Waals forces, sufficient ionic migration space, and loose ionic bonds in the coordination of perovskite structures lead to a large number of defects in perovskite films, such as Pb vacancies, I vacancies, and Pb–I mutual antisite substitutions. These defects turn into nonradiative recombination centers and inhibit the transport of photogenerated carriers, decreasing device performance. , In addition, these defects provide intrusion pathways for water and oxygen, leading to perovskite degradation and subsequently affecting the long-term stability of Pero-SCs. , Additive engineering is a convenient and practical approach for acquiring high-quality perovskite films.…”
Section: Introductionmentioning
confidence: 99%
“…The perovskite formation entails the synthesis of their parent precursors, which was found long before. 15,16 The first metalhalide perovskites, reported in 1893, employed cesium as A-site cations to form CsPbX 3 , which was later identified to follow the perovskite structure in 1958. 17,18 In 1978, methylammonium ions (MA + ) were introduced, leading to organic−inorganic metal halide perovskites based on either Pb or Sn.…”
Section: ■ Introductionmentioning
confidence: 99%
“…The remarkable strides achieved in perovskite application development over a short period stem from the realization of high-quality perovskites in the form of crystals and thins films. The perovskite formation entails the synthesis of their parent precursors, which was found long before. , The first metal-halide perovskites, reported in 1893, employed cesium as A-site cations to form CsPbX 3 , which was later identified to follow the perovskite structure in 1958. , In 1978, methylammonium ions (MA + ) were introduced, leading to organic–inorganic metal halide perovskites based on either Pb or Sn. , A range of options for ions to occupy in their corresponding sites in the ABX 3 structure is possible, and each chemical composition determines their own distinct optoelectronic properties such as their band gap, absorption coefficients, and photoluminescence. , Perovskite dimensions can also be manipulated to form nanoparticles, 2D, or quasi-2D structures through appropriate precursor and synthesis choices. The chemical reaction governing the perovskite synthesis is seemingly straightforward, for example, simply by mixing precursors in solution followed by casting films or growing free-standing particles, as described by the following chemical equation: AX + BX 2 ABX 3 Here, A represents organic or inorganic monovalent cations occupying A-sites, surrounded by corner-sharing BX 6 octahedra to maintain a charge balance. B symbolizes divalent transition metal cations, while halide ions such as Cl – , Br – , and I – occupy X-sites. , …”
Section: Introductionmentioning
confidence: 99%