2006
DOI: 10.1039/b510742c
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Fabrication of suspended single-walled carbon nanotubesvia a direct lithographic route

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Cited by 8 publications
(7 citation statements)
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“…The gate electrode (Ti (5 nm)/Au (50 nm)) was formed similarly to the source and drain electrodes. The detailed method has been described elsewhere. , Logic circuits were fabricated by connecting several TFTs with gold wire with wire bonder.…”
mentioning
confidence: 99%
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“…The gate electrode (Ti (5 nm)/Au (50 nm)) was formed similarly to the source and drain electrodes. The detailed method has been described elsewhere. , Logic circuits were fabricated by connecting several TFTs with gold wire with wire bonder.…”
mentioning
confidence: 99%
“…An array of thin film transistors (TFTs) was fabricated with randomly networked single-walled carbon nanotubes (SWCNTs) that were synthesized selectively on a designed array of catalyst photoresists (0.01 M of ferrocene) 21 by using a remote plasma-enhanced chemical vapor deposition (PECVD) method at low temperature (450 °C). 22 The corresponding source and drain electrodes with Ti (5 nm)/ Au (50 nm) (channel length, 2, 3, 5, 7, 10 µm; width, 40 µm; 20 channels for each length in a sample) were deposited to form an array of 200 TFTs.…”
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confidence: 99%
“…Position and distribution of CNT between electrodes were difficult to be controlled when spin coating was used [7,20]. High temperatures are needed when CNTs are synthesized directly and show other drawbacks as well such as poor selectivity of growth and noncompatibility of device at high temperatures [21][22][23]. Another technique is to deposit CNTs manually.…”
Section: Introductionmentioning
confidence: 99%
“…1Ϫ4 Chemical vapor deposition (CVD), involving the decomposition of a carbon source over a catalyst particle, overcomes this drawback by a priori control of the nanotube growth site, when catalyst positioning is possible on the device structure. 5 However, devices rarely tolerate the typical CVD growth temperatures, and the synthesis of high quality CVD CNTs at low temperature remains a subject of intensive research. Although significant progresses have been achieved in the optimization of the CVD process in terms of product quality, 6,7 catalytically grown CNTs still exhibit high density of structural defects, 8 which make them inappropriate for several applications, in particular those involving individual CNTs.…”
mentioning
confidence: 99%
“…Controlled positioning is one of the most significant hurdles in the application of carbon nanotubes (CNTs). Chemical vapor deposition (CVD), involving the decomposition of a carbon source over a catalyst particle, overcomes this drawback by a priori control of the nanotube growth site, when catalyst positioning is possible on the device structure . However, devices rarely tolerate the typical CVD growth temperatures, and the synthesis of high quality CVD CNTs at low temperature remains a subject of intensive research.…”
mentioning
confidence: 99%