Fabrication of multi-layered absorption structure for high quantum efficiency photon detectors

Fujii, Go; Fukuda, Daiji; Nozaki, Takayuki; Yoshizawa, Akio; Tsuchida, Hidemi; Fujino, H.; Ishii, Hiroyuki; Itatani, Taro; Inoue, Shuichiro; Zama, Tatsuya

doi:10.1063/1.3292442

Cited by 2 publications

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“…In order to reach high detection efficiency, the thickness of superconducting layer is generally limited to 10 nm or less. Also, the detector has a meander [1][2][3][4][5][6][7][8][9][10] or circular type structure [11] with a narrow strip (100 nm or less) to maximize its active area. Multi-element devices consisting of hundreds of SNSPDs and providing higher counting rates and photon-number resolution capability have been proposed [12].…”

Section: Introductionmentioning

confidence: 99%

“…Several nanofabrication techniques have been used in SNSPDs fabrication. These include e-beam lithography (EBL) [1][2][3][4][5][6][7][8][9][10][11], focused ion beam (FIB) [13], and local oxidation with an atomic force microscope (AFM) [14,15]. However, these techniques usually require expensive equipments, and are time consuming for fabricating devices with large active area and, particularly for making the multi-element devices.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of Nb Superconducting Nanowires by Nanoimprint Lithography

Zhao

Jin

et al. 2015

IEEE Trans. Appl. Supercond.

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Nanoimprint lithography (NIL) is an attractive nonconventional lithographic technique in the fabrication of superconducting nanowires for superconducting nanowire single-photon detectors (SNSPDs) with large effective detection areas or multi-element devices consisting of hundreds of SNSPDs, due to its low cost and high throughput. In this work, NIL was used to pattern superconducting nanowires with meander-type structures based on ultra-thin (~4 nm) Nb films deposited by DC-magnetron sputtering at room temperature. A combination of thermal-NIL and UV-NIL was exploited to transfer the meander pattern from the imprint hard mold to Nb films. The hard mold based on Si wafer was defined by e-beam lithography (EBL), which was almost nonexpendable due to the application of IPS ® as a soft mold to transfer the pattern to the imprint resist in the NIL process.The specimens fabricated by NIL keep good superconducting properties which are comparable to that by conventional EBL process.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication of Nb Superconducting Nanowires by Nanoimprint Lithography

Zhao

Jin

et al. 2015

IEEE Trans. Appl. Supercond.

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“…This means that Nb SNSPD could have a high count rate. [7][8][9] Moreover, Nb-SNSPDs could be photon-number-resolved and spectrally sensitive due to a small resistance of the photon-induced normal state domains on Nb meander. [7] For these reasons, Nb is a promising alternative material for SNSPDs.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and properties of the meander nanowires based on ultra-thin Nb films

Zhao¹,

Jin²,

Li³

et al. 2014

Chinese Phys. B

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We report the fabrication and the study of superconducting properties of ultra-thin Nb superconducting meander nanowires, which can be used as superconducting nanowire single-photon detectors (SNSPDs). The ultra-thin (about 7nm thick) Nb films are patterned into micro-bridges, and 100-nm wide meander nanowires by using e-beam lithography (EBL). The average transition temperature (T c ) of the nanowires is about 4.8 K and the critical current density j c is about 2.8 × 10 6 A/cm 2 . Superconducting characteristics of the specimens at different applied magnetic fields up to 8 T (parallel or perpendicular to the specimen) are systematically investigated. The normalized temperature t (= T /T c ) dependences of the parallel critical field (H c ) for both the micro-bridge and the meander nanowire are almost the same, following the Ginzburg and Landau (GL) formalism for ultra-thin films. However, in perpendicular field and in the vicinity of T c (> 0.95T c ), the critical field H c⊥ of the nanowire exhibits a down-turn curvature nonlinear temperature dependence while the micro-bridge displays a linear temperature dependence. The nonlinear behavior of H c⊥ in the nanowire is believed to be due to the fact that in the vicinity of T c the coherence length becomes larger than the line width. Additionally, the localization of carriers in the nanowire could also contribute to the nonlinear behavior. The resistive transitions could be described by the phase-slip model for quasi-one-dimensional system. Moreover, the hysteresis in I-V curve of the meander nanowires can be illustrated by a simple model of localized normal hotspot maintained by Joule heating.

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Fabrication of multi-layered absorption structure for high quantum efficiency photon detectors

Cited by 2 publications

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Fabrication of Nb Superconducting Nanowires by Nanoimprint Lithography

Fabrication of Nb Superconducting Nanowires by Nanoimprint Lithography

Fabrication and properties of the meander nanowires based on ultra-thin Nb films

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