2013
DOI: 10.1007/s00542-012-1720-9
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Fabrication of micro-trench structures with high aspect ratio based on DRIE process for MEMS device applications

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Cited by 10 publications
(8 citation statements)
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“…3(b). A minimum section width of 0.04 mm and a length of 1.093 mm were obtained according to the advanced silicon deep reactive ion etching (DRIE) technique on 450 µm-thick silicon wafers 34,[38][39][40] in Fig. 4.…”
Section: Structural Design and Fabrication Of The Micropumpmentioning
confidence: 99%
“…3(b). A minimum section width of 0.04 mm and a length of 1.093 mm were obtained according to the advanced silicon deep reactive ion etching (DRIE) technique on 450 µm-thick silicon wafers 34,[38][39][40] in Fig. 4.…”
Section: Structural Design and Fabrication Of The Micropumpmentioning
confidence: 99%
“…Some researchers have reported HAR structure fabrication, [5][6][7] but the fabrications can only be demonstrated on silicon substrates. Although some literatures have demonstrated very smooth silicon sidewalls 8,9 after etching of SOI wafers, the reported aspect ratios still remain low. Therefore, the DRIE technology is continuously improved, but it is still very difficult to obtain a HAR feature with vertical and smooth silicon etching sidewalls for SOI wafers with a relatively thick device layer.…”
Section: Introductionmentioning
confidence: 96%
“…Since scalloping is not acceptable in specific applications, a dedicated effort has been provided to control and reduce it, mainly based on the optimization of DRIE process parameters [47][48][49][50], or, alternatively, removing it after fabrication [38].…”
Section: Introductionmentioning
confidence: 99%