Fabrication of a White-Light-Emitting Diode by Doping Gallium into ZnO Nanowire on a p-GaN Substrate

Chen, Chih-Han; Chang, Shoou Jinn; Li, Meng-Ju; Chen, I-Cherng; Hsueh, Ting-Jen; Hsu, An-Di; Hsu, Cheng-Liang

doi:10.1021/jp101392g

Cited by 74 publications

(60 citation statements)

References 24 publications

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“…Second, a large number of excited electrons are stored at the tips of NWs, thereby causing a subsequent point discharge that reduces the electric field. [41][42][43][44][45][46][47] This article provides a helpful review on doping ZnO 1D and 2D nanostructures. First, the synthesis methods for and the properties of doped ZnO 1D and 2D nanostructures are introduced and discussed.…”

Section: B3014mentioning

confidence: 99%

“…FE cathodes from ZnO nanostructures have gained significant interest because of their valuable properties, including their high aspect ratio, low work function, general stability, and high electrical conductivity. [41][42][43][44][45][46][47] Compared with other materials, such as GaN, ZnO exhibits better characteristic and potential to fabricate UV photosensors. Highperformance solid-state UV photosensors have attracted interest in recent years.…”

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confidence: 99%

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Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Young¹,

Yang²,

Lai³

2016

J. Electrochem. Soc.

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In recent decades, ZnO-based nanostructures have attracted considerable attention because of their various possible morphologies, large surface-to-volume ratios, non-toxicity, easy synthesis, low cost, and excellent physical properties for fabricating highperformance electronic, magnetic, and optoelectronic devices. This review article focuses on recent advances in Al-, Ga-, and In-doped ZnO nanostructures, including a brief overview of the hydrothermal method and aqueous solution methods. Among these strategies, ZnO nanostructures synthesized via the hydrothermal method exhibits distinct advantages, such as low growth temperature, low cost, and large resultant surface area, as well as applicability in fabricating field emission (FE) devices and photosensors. FE devices have gained widespread attention for their applications in flat-panel displays and other electronic devices, such as microwave amplifiers, X-ray tubes, cathode-ray tube monitors, and electron microscopes. FE devices are influenced by interrelated factors, including emitter geometry, crystal structure, conductivity, work function, spatial distribution of emitting centers, and nanostructure density of nanorods. An applied electric field bends the surface barrier to form a triangular barrier, and the excited electrons tunnel easily to generate the emission current. A large number of excited electrons are stored at the tips of nanowires, thereby causing subsequent point discharge that reduces the electric field. ZnO-based ultraviolet (UV) photosensors are frequently used in environmental monitoring, securing space-to-space communication, flame sensing, and chemical biological analysis. ZnO UV photosensors are used to manufacture various structures, such as p-n heterojunction photodiodes, metal-semiconductor-metal photosensors, and Schottky photodiodes. The resistance of pure n-type ZnO nanostructure is high. ZnO nanostructures are commonly doped with other elements. To improve the electrical properties of ZnO nanostructures, donor dopants for ZnO, such as group III elements (Al, Ga, and In), can be used. The optical and electrical properties of fabricated ZnO optoelectronic devices can also be improved by doping with group III elements. Furthermore, as a material with a direct bandgap (3.37 eV), ZnO can easily absorb wavelengths in the UV range. Thus, illumination under UV can enhance the FE capacity of ZnO nanowires. Methods that enhance the performance of field emitters and photosensors are introduced in this review paper. We hope that this review paper can provide a useful reference to those who are interested in ZnO-based field emission devices and photosensors. ZnO-based nanostructures comprise a highly promising key group of II-VI semiconductor materials. ZnO-based nanostructures have numerous advantages, including a wide bandgap of 3.37 eV, a direct bandgap structure at room temperature, a large exciton binding energy of approximately 60 meV, thermal stability at room temperature (significantly higher than that of GaN), non-toxicity, manufactu...

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Section: B3014mentioning

confidence: 99%

mentioning

confidence: 99%

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Young¹,

Yang²,

Lai³

2016

J. Electrochem. Soc.

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“…ZnO 纳米线/棒阵列具有长径比高 [6] 、比表面积大 [7] 及电子注入效率高 [8] 等优点, 在发光二极管 [9] 、纳米发电机 [10] 、染料敏化太阳能电池 [11] 、紫外探测器 [12] 和气体传感器 [13] 等领域具有重要应用. 高质量的 ZnO 纳米线/棒阵列是提高器件性能的决定因素 [10,14] .…”

Section: 引言unclassified

Research Progress in Preparation and Applications of ZnO Nanowire/rod Arrays by Hydrothermal Method

Hao¹,

Deng²,

Yang³

et al. 2014

Acta Chim. Sinica

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The quality of zinc oxide (ZnO) nanowire/rod arrays determines the performance of the constructed photoelectric devices. In order to prepare high-quality ZnO nanowire/rod arrays with greater surface to volume ratio, better verticality and separate roots, a brief summary has been made about the research progress of the controllable preparation of ZnO nanowire/rod arrays using two-step hydrothermal method in this paper. Moreover, how the seed layer, growth solution and preparation method influence their morphology has been discussed respectively, and the mechanisms of ammonia, hexamethylenetetramine and polyethyleneimine in promoting the growth of nanowire/rod arrays have been particularly analyzed. At the same time, the method of controllable preparation of ZnO nanowire arrays based on microfluidic technique has been put forward, which can improve the growth efficiency of nanowire arrays. Finally, an introduction has been made about how the morphology of ZnO nanowire/rod arrays plays an important role in improving the performance of dye-sensitized solar cells, nanogenerators, gas sensors and field emission devices, and an outlook of future development trend of two-step hydrothermal method in preparing ZnO nanowire/rod arrays is also provided.

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“…[13][14][15][16][17][18][19][20] Zhu et al [13] deposited undoped nZnO thin films on p-GaN substrates using molecular beam epitaxy (MBE) to form an n-ZnO/p-GaN heterojunction. Under back-illumination conditions, the photodetector shows a UV photoresponse in a narrow spectrum window within 360-390 nm and a low peak responsivity of 1 × 10 −6 A/W at zero bias.…”

Section: Introductionmentioning

confidence: 99%

“…With high sensitivity to UV light, the high density of surface trap states, and a much higher surface area-tovolume ratio, one-dimensional ZnO nanostructures such as nanorods (NRs) or nanowires can improve the properties of photodetectors. [15][16][17][18][19][20] Chen et al reported a UV photodetector based on a ZnO nanowire/p-GaN heterojunction. [17] The heterojunction device in the dark showed a low reverse leakage current and large illuminated current.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic characteristics of UV photodetector based on GaN/ZnO nanorods p-i-n heterostructures

Zhang

Zhao

Wang

et al. 2015

Electron. Mater. Lett.

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Fabrication of a White-Light-Emitting Diode by Doping Gallium into ZnO Nanowire on a p-GaN Substrate

Cited by 74 publications

References 24 publications

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Review—Growth of Al-, Ga-, and In-Doped ZnO Nanostructures via a Low-Temperature Process and Their Application to Field Emission Devices and Ultraviolet Photosensors

Research Progress in Preparation and Applications of ZnO Nanowire/rod Arrays by Hydrothermal Method

Optoelectronic characteristics of UV photodetector based on GaN/ZnO nanorods p-i-n heterostructures

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