Fabrication Aspects of Germanium on Insulator from Sputtered Ge on Si-Substrates

Balakumar, S.; Roy, M. M.; Ramamurthy, B.; Tung, Chih Hang; Gao, Fei; Tripathy, S.; Chi, Dongzhi; Kumar, R.; Balasubramanian, N.; Kwong, Dim‐Lee

doi:10.1149/1.2179188

Cited by 45 publications

(40 citation statements)

References 7 publications

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“…This clearly means that crystal growth is initiated at the Si seeding areas and propagates laterally over SiO 2 films. It is found that the lateral growth length exceeds several hundreds Pm, which is one order longer than those reported in the literatures [11][12][13][14][15].…”

Section: Results and Discussion (A) Giant Ge Lateral Growth Over Sio contrasting

confidence: 51%

High-mobility defect-free ge single-crystals by rapid melting growth on insulating substrates

Miyao

Toko

Kurosawa

et al. 2010

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

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Single-crystal Ge films on insulating substrates are desired to achieve advanced 3-dimensional large-scale integrated circuits (3D-LSIs) and thin-film transistors (TFTs). We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves giant Ge on insulator (GOI) structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth is clarified as the solidification temperature gradient originating from melting induced Si-Ge mixing. Combination with the artificial Si micro-seed technique and the rapid melting growth enables the single-crystal defect-free Ge on transparent insulating substrates. High hole mobility exceeding 1000 cm 2 /Vs is also demonstrated.

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Section: Results and Discussion (A) Giant Ge Lateral Growth Over Sio contrasting

confidence: 51%

High-mobility defect-free ge single-crystals by rapid melting growth on insulating substrates

Miyao

Toko

Kurosawa

et al. 2010

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

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“…To mitigate these problems, the Si seeding rapid melt growth (RMG) of amorphous-Ge has been proposed. [10][11][12][13] These efforts enable the growth of defect-free single-crystalline Ge strips with a length of approximately 1 cm and width of 2 lm to 3 lm.…”

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confidence: 99%

Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth

Wen

Liu

et al. 2013

Journal of Applied Physics

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Room temperature photoluminescence (PL) was observed along 50 μm long Ge strips on insulator on bulk Si substrates fabricated by rapid melt growth. The PL peaks evidently exhibited a redshift from the origin to the end of the Ge strip because of the shrinkage of the direct bandgap of Ge. Moreover, PL intensities increased along the direction of lateral epitaxial growth primarily because of the decrease in the energy difference between the direct and indirect gaps of Ge. The change in the Ge band structure, which facilitated changes in PL peaks and intensities, was found to have resulted from the variation of tensile strain ratios and Si fractions along Ge strips. Furthermore, the PL intensity at the end of the strip was one magnitude higher than that of bulk Ge, which indicates the high quality of Ge-on-insulator structures.

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“…Straight, smooth stripes with no delamination are observed before heat treatment (anneal) of the sample. During the RTA, the crucible can become strained due to the germanium balling phenomenon [8]. In our work the capping layer was reinforced using a polycrystalline silicon layer which was found to be essential in minimizing germanium balling and delamination [9].…”

Section: Methodsmentioning

confidence: 99%

“…In the case of a capping layer comprising only low temperature oxide (PECVD oxide), significant cracks and delamination of the stripes are observed and crucible integrity is compromised as shown in figure 2. This is because when heat treatment is applied above germanium melting point (938 o C), it tends to form into ball shapes (balling phenomenon) [8] causing the crucible to become strained. The issue is more severe with wide stripe since micro-crucible cap is wider and hence less rigid.…”

Section: Methodsmentioning

confidence: 99%

Characterization of Rapid Melt Growth (RMG) Process for High Quality Thin Film Germanium on Insulator

et al. 2012

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Germanium is one of the most promising materials for high performance infra-red photovoltaic devices. High quality singlecrystal germanium on insulator structures can be produced by a Rapid Melt Growth process. Experiments show that thin-film germanium deposited by physical vapor deposition provides better quality in comparison with chemical vapor deposition. The longitudinal optical Ge-Ge peak in Raman spectrum is shifted from the expected 300.2 cm -1 position due to tensile stress resulting from the thermal expansion differences of the materials. The importance of silicon in the rapid melt process is confirmed by the fact that germanium films on sapphire substrates yielded polycrystalline structure. Films produced at high temperature (980 o C) show GeGe Raman peak with linewidth of 3.3 cm -1 indicating good crystalline quality, comparable to bulk germanium (3.2 cm -1 ), and thus demonstrating the potential to produce low cost high quality germanium films.

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Fabrication Aspects of Germanium on Insulator from Sputtered Ge on Si-Substrates

Cited by 45 publications

References 7 publications

High-mobility defect-free ge single-crystals by rapid melting growth on insulating substrates

High-mobility defect-free ge single-crystals by rapid melting growth on insulating substrates

Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth

Characterization of Rapid Melt Growth (RMG) Process for High Quality Thin Film Germanium on Insulator

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