Fabrication and study of photovoltaic material CuInxGa1−xSe2 bulk and thin films obtained by the technique of close-spaced vapor transport

Moussa, G. W. El Haj; Ariswan,; Khoury, A.; Guastavino, F.; Llinarès, C.

doi:10.1016/s0038-1098(02)00100-x

Cited by 21 publications

(11 citation statements)

References 17 publications

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“…Although the CIGSe compounds have been known for a long time, literature is very poor about crystal structure studies [8][9][10][11] especially by single crystal X-ray diffraction technique. In a previous study [12] we have shown that the chalcopyrite structure is no longer valid for the description of Cu-poor and high Ga-content CIGSe compounds.…”

Section: Introductionmentioning

confidence: 99%

Crystal structure re-investigation in wide band gap CIGSe compounds

Souilah¹,

Rocquefelte²,

Lafond³

et al. 2009

Thin Solid Films

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Section: Introductionmentioning

confidence: 99%

Crystal structure re-investigation in wide band gap CIGSe compounds

Souilah¹,

Rocquefelte²,

Lafond³

et al. 2009

Thin Solid Films

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“…It was left in the heater for 72 hours at which point it was allowed to slowly cool down [7]. To characterize the crystals, X-ray diffraction was carried out using a Seifert MZIV powder diffractometer (θ, • a polarizer and an analyzer used in the range of 220 nm to 3000 nm, with extinction rates of 10 −5…”

Section: Methodsmentioning

confidence: 99%

“…Therefore, CuIn 3 Se 5 has been of interest to many groups [6]. In this work, crystals of CuIn 3 Se 5 were grown by the horizontal Bridgman methods [7] using a direct combination of high purity 5N for Cu, 6N for Se and Ga. The elements were placed in a quartz tube sealed under a vacuum of 5 × 10 −6 Torr.…”

mentioning

confidence: 99%

Identification of Optical Transitions by Spectroscopic Ellipsometry (SE) on CuIn3Se5 Bulk Compounds

Habib¹,

Moussa²

2017

WJCMP

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Bulk materials were synthesized by the Bridgman technique using the elements Cu, In and Se. These samples were characterized by Energy Dispersive Spectrometry (EDS) to determine the elemental composition, as well as by X-ray diffraction for structure, hot point probe method for type of conductivity, Optical response (Photoconductivity) and Photoluminescence (PL) to determine the band gap value and Spectroscopic Ellipsometry to find energy levels above the gap in the band scheme at room-temperature. They show a nearly perfect stoechiometry and present a p-type conductivity. CuIn 3 Se 5 either has a Stannite structure, an Ordered Defect Chalcopyrite structure (ODC), or an Ordered Vacancy Chalcopyrite structure (OVC). The gap energy obtained for the different samples was 1.23 eV. Energy levels above the gap in the band scheme were determinate by measuring the dielectric function at room temperature for energies lying between 1.5 and 5.5 eV. Many transitions were observed above the gap for different samples. Spectroscopic Ellipsometry gave evidence for the interpretation of the choice of gap values which were compatible with that obtained from solar spectrum.

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“…The "CSVT" method needs a very simple and inexpensive reactor ( Figure 1) described in [10]. It consists of a vertical quartz tube, with an inner diameter of about 20 mm, and a length of 10 -20 cm, attached to a vacuum system.…”

Section: Methodsmentioning

confidence: 99%

Influence of Iodine Pressure on the Growth of CuIn1-xGaxSe2 Thin Films Obtained by Close-Spaced Vapor Transport “CSVT”

Habib¹,

Asmar²,

Helou³

et al. 2013

WJCMP

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We present the results concerning photovoltaic materials CuIn 1−x Ga x Se 2 thin films, which were obtained by closespaced vapor transport "CSVT". The influence of the iodine pressure on the growth of CuIn 1−x Ga x Se 2 thin films was studied. The thin films were characterized by Energy Dispersive Spectrometry (EDS), Scanning Electron Microscope (SEM), hot point probe method, X-Ray Diffraction (XRD), Photoluminescence, and Optical response (Photoconductivity). At high pressure, the deposition rate was very important. The films were relatively thick and homogeneous with large grains dimensions. These films are formed of crystals placed in a preferential orientation depending on the plan (112). At low pressure, the films were thin and inhomogeneous with relatively small grains. These films of crystals didn't have preferential orientation.

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Fabrication and study of photovoltaic material CuInxGa1−xSe2 bulk and thin films obtained by the technique of close-spaced vapor transport

Cited by 21 publications

References 17 publications

Crystal structure re-investigation in wide band gap CIGSe compounds

Crystal structure re-investigation in wide band gap CIGSe compounds

Identification of Optical Transitions by Spectroscopic Ellipsometry (SE) on CuIn<sub>3</sub>Se<sub>5</sub> Bulk Compounds

Influence of Iodine Pressure on the Growth of CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> Thin Films Obtained by Close-Spaced Vapor Transport “CSVT”

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Fabrication and study of photovoltaic material CuInxGa1−xSe2 bulk and thin films obtained by the technique of close-spaced vapor transport

Cited by 21 publications

References 17 publications

Crystal structure re-investigation in wide band gap CIGSe compounds

Crystal structure re-investigation in wide band gap CIGSe compounds

Identification of Optical Transitions by Spectroscopic Ellipsometry (SE) on CuIn&lt;sub&gt;3&lt;/sub&gt;Se&lt;sub&gt;5&lt;/sub&gt; Bulk Compounds

Influence of Iodine Pressure on the Growth of CuIn&lt;sub&gt;1-x&lt;/sub&gt;Ga&lt;sub&gt;x&lt;/sub&gt;Se&lt;sub&gt;2&lt;/sub&gt; Thin Films Obtained by Close-Spaced Vapor Transport “CSVT”

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Identification of Optical Transitions by Spectroscopic Ellipsometry (SE) on CuIn<sub>3</sub>Se<sub>5</sub> Bulk Compounds

Influence of Iodine Pressure on the Growth of CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> Thin Films Obtained by Close-Spaced Vapor Transport “CSVT”