Fabrication and properties of ZnO:Cu and ZnO:Ag thin films

Influence of Ag, Cu dopants on the second and third harmonic response of ZnO films

“…Similarly to this, the Cu-doped ZnO films show orientation in the (0 0 2) direction [8,10,13,14,16,17] and most Cu atoms occur as interstitial in the lattice of ZnO crystallites. The radius of Cu 2+ (0.072 nm) is a little bit less, meanwhile, the radius of Cu + is larger than that of Zn 2+ (0.074 nm).…”

“…As it is evident from previous reports, the Ag-doped ZnO films have preferred orientation in the (0 0 2) direction [6,7,9,13,15,19,30]. Because Ag + ions have larger radius (0.122 nm) than Zn 2+ (0.074 nm), they either substitute ions of Zn 2+ leading to the distortion of unit cell or segregate at the grain boundaries of ZnO and hence induce considerable disorder and faster grow of ZnO grains [19,30].…”

“…In the last few years, ZnO has emerged as one of the most promising materials due to its optical and electrical properties, high mechanical and chemical stability, together with its abundance in nature and nontoxicity. In order to improve the properties of ZnO films, several techniques such as sputtering [6][7][8][9][10], thermal evaporation [11], metal-organic chemical vapour deposition [12,13], spray pyrolysis [14] and pulsed laser deposition [15][16][17] have been applied for their production. Radio-frequency (RF) magnetron sputtering technique is one of preferred among these techniques since it is versatile and permits to produce the high-quality films for different applications.…”

Photoluminescence and optical properties of nanostructure Ni doped ZnO thin films prepared by sol–gel spin coating technique

“…2 shows PL spectra of the ZnO and Ni-doped ZnO (0.2%, 0.4%, 0.6%, 0.8%, 1%, 3%, 5% and 7%) films. The origin of the emission band around 400 nm (3.10 eV) for all samples may be caused by the electron transition from the energy level of interstitial Zn to valance band [36][37][38]. This peak is highly intense in the spectrum of the undoped ZnO and ZnO with 0.2% and 0.8% Ni as compared to other samples.…”

Luminescence and structure of ZnO–ZnS thin films prepared by oxidation of ZnS films in air and water vapor

“…ZnO is an important electronic material and it finds use in solar cells application [1], ultraviolet emitting devices [2], window layers [3,4], etc. ZnO films with a perfect crystalline structure have narrow-band intensive ultraviolet emission (380 nm) and noticeably less intensive wide-band green emission (500 nm) related to the deep level defects [5,6]. Films with less crystalline perfection have intensive green emission with the maximum at 500-530 nm [7] without edge and exciton ultraviolet emissions.…”