Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD

Jones, Robert E.; Thomas, S.G.; Bharatan, S.; Thoma, R.; Jasper, C.; Zirkle, Thomas E.; Edwards, N. V.; Liu, R.; Wang, X.D.; Xie, Qiwei; Rosenblad, C.; Ramm, J.; Iselle, G.; Känel, H. von; Oh, Jungwoo; Campbell, Joe C.

doi:10.1109/iedm.2002.1175957

Cited by 12 publications

(3 citation statements)

References 3 publications

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“…Renewed interest in the development of germanium-based devices for advanced CMOS, optoelectronic and radiation detection applications [1][2][3] has motivated recent studies to better characterize dopant implantation, activation and diffusion in germanium [4][5][6], which are critical process steps for modern germanium device fabrication. Accurate measurements of process parameters such as diffusivity are necessary for the numerical simulation of device fabrication and electrical performance.…”

Section: Introductionmentioning

confidence: 99%

Accurate modelling of average phosphorus diffusivities in germanium after long thermal anneals: evidence of implant damage enhanced diffusivities

Carroll

Koudelka

2006

Semicond. Sci. Technol.

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Average phosphorous diffusivities after implantation in 1 0 0 germanium have been measured for long anneals (i.e., 3-10 h) at temperatures from 600 to 800 • C. Considerable dose loss after annealing is also observed and quantified for temperatures below 800 • C. A diffusion model using an extrinsic diffusivity coefficient combined with a segregation component between the germanium and the oxide, to account for dopant loss, is found to be sufficient to completely explain the observed diffusion profiles. The best-fit diffusivity and segregation coefficients are reported for this model and the diffusivities are found to be over an order of magnitude slower than those measured after rapid thermal annealing (i.e., short anneals of only a few seconds). It is proposed that this disagreement of diffusivities between short and long anneals is due to implant damage perhaps similar to well-known transient enhanced diffusion effects observed in silicon.

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Section: Introductionmentioning

confidence: 99%

Accurate modelling of average phosphorus diffusivities in germanium after long thermal anneals: evidence of implant damage enhanced diffusivities

Carroll

Koudelka

2006

Semicond. Sci. Technol.

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“…3 For successful device applications, however, low resistivity, diffusionless, and low leakage germanium junctions are required. Boron is often used as a p-type dopant, and various studies have investigated its diffusion or activation behavior in Ge.…”

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confidence: 99%

Implantation, Diffusion, Activation, and Recrystallization of Gallium Implanted in Preamorphized and Crystalline Germanium

Hellings

Wuendisch

Eneman

et al. 2009

Electrochem. Solid-State Lett.

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We investigated the as-implanted profiles, electrical activation, diffusion, and recrystallization of gallium implanted in germanium samples through the combination of secondary-ion mass spectrometry, transmission electron microscopy, and sheet resistance measurement. Because of their high activation level ͑4.4 ϫ 10 20 cm −3 ͒ without preamorphization, low activation temperature ͑400°C͒, and absence of diffusion ͑up to 700°C͒, Ga junctions in crystalline Ge are very promising candidates for implementation in germanium technology. In the amorphous Ge phase, an increased diffusivity of Ga was observed at temperatures above 400°C.

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“…Germanium (Ge), a metalloid of the group IV of the periodic table, has been known for its use in the semiconductor industry1–3 and recognized as a promising material for photodetectors 4, 5. The coordination compounds of Ge are considered as a new class of functional materials in electronics and the biomedical significance of its organic compounds opened a new horizon when they were found to be highly efficient in the treatment of cancer 6, 7.…”

Section: Introductionmentioning

confidence: 99%

Hydrated germanium (II): Irregular structural and dynamical properties revealed by a quantum mechanical charge field molecular dynamics study

et al. 2009

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Structural and dynamical properties of Ge (II) in aqueous solution have been investigated using the novel ab initio quantum mechanical charge field (QMCF) molecular dynamics (MD) formalism. The first and second hydration shells were treated by ab initio quantum mechanics at restricted Hartree-Fock (RHF) level using the cc-pVDZ-PP basis set for Ge (II) and Dunning double-zeta plus polarization basis sets for O and H. Besides ligand exchange processes and mean ligand residence times to observe dynamics, tilt- and theta-angle distributions along with an advanced structural parameter, namely radial and angular distribution functions (RAD) for different regions were also evaluated. The combined radial and angular distribution depicted through surface plot and contour map is presented to provide a detailed insight into the density distribution of water molecules around the Ge(2+) ion. A strongly distorted hydration structure with two trigonal pyramidal substructures within the first hydration shell is observed, which demonstrates the lone-pair influence and provides a new basis for the interpretation of the catalytic and pharmacological properties of germanium coordination compounds.

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Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD

Cited by 12 publications

References 3 publications

Accurate modelling of average phosphorus diffusivities in germanium after long thermal anneals: evidence of implant damage enhanced diffusivities

Accurate modelling of average phosphorus diffusivities in germanium after long thermal anneals: evidence of implant damage enhanced diffusivities

Implantation, Diffusion, Activation, and Recrystallization of Gallium Implanted in Preamorphized and Crystalline Germanium

Hydrated germanium (II): Irregular structural and dynamical properties revealed by a quantum mechanical charge field molecular dynamics study

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