Fabrication and characterization study of ZnTe/n-Si heterojunction solar cell application

AlMaiyaly, BushraK H.; Hussein, Bushra H.; Shaban, Auday H.

doi:10.1088/1742-6596/1003/1/012084

Cited by 10 publications

(6 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thin film solar cells are comprised of several thin film layers and a variety of strategies is available thus far to develop them, [82][83][84][85][86][87][88][89][90][91][92][93][94][95][96][97] providing diverse properties. An overview of the physical and chemical routes is presented in Fig.…”

Section: Deposition Techniquesmentioning

confidence: 99%

“…Thin film solar cells can be developed with better efficiency and stability by optimizing the thickness and properties of their different constituent layers, i.e., window, absorber, buffer and contact layers. As stated, a variety of deposition techniques has been employed thus far to grow the constituent layers, which are classified as follows: (a) physical and (b) chemical routes, where the resistive heating thermal evaporation, electron beam evaporation, molecular beam epitaxy, sputtering, and electrodeposition techniques have been used thus far for the fabrication of ZnTe thin films, [82][83][84][85][86][87][88][89][90][91][92][93][94][95][96][97] providing diverse properties. An overview of the physical and chemical routes is presented in Fig.…”

Section: Review Materials Advancesmentioning

confidence: 99%

See 1 more Smart Citation

An overview on the role of ZnTe as an efficient interface in CdTe thin film solar cells: a review

et al. 2022

View full text Add to dashboard Cite

show abstract

Section: Deposition Techniquesmentioning

confidence: 99%

Section: Review Materials Advancesmentioning

confidence: 99%

An overview on the role of ZnTe as an efficient interface in CdTe thin film solar cells: a review

et al. 2022

View full text Add to dashboard Cite

show abstract

“…The thickness of AIS and AgInSe1.8S0.2 samples was determined using the optical interferometer method. Additionally, the optical properties were assessed by noting transmission and absorption spectrums within the 400 to 1000 nm range, calculating absorption coefficients (α) and the energy gap (Egopt) using Lambert's Law and Tauc equation, respectively [28][29][30][31]. Optical constants were also considered [32,33].…”

Section: Methodsmentioning

confidence: 99%

Effect of Sulfur on Characterization of AgInSe_1.8S_0.2 Thin Film and n-AgInSe_1.8S_0.2 / p-Si Solar Cell

Hussein,

Hassun,

Al-Maiyaly

et al. 2024

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

Ternary Silver Indium selenide Sulfur AgInSe1.8S0.2 in pure form and with a 0.2 ratio of Sulfur were fabricated via thermal evaporation under vacuum 3*10-6 torr on glasses substrates with a thickness of (550) nm. These films were investigated to understand their structural, optical, and Hall Characteristics. X-ray diffraction analysis was employed to examine the impact of varying Sulfur ratios on the structural properties. The results revealed that the AgInSe1.8S0.2 thin films in their pure form and with a 0.2 Sulfur ratio, both at room temperature and after annealing at 500 K, exhibited a polycrystalline nature with a tetragonal structure and a predominant orientation along the (112) plane, indicating an enhanced degree of crystallinity. The Atomic Force Microscopy (AFM) was utilized to explore how Sulfur affects roughness of surfaces and sampls Grain Size. Furthermore, optical parameters, such as the optical gap and absorption coefficient, were calculated to assess the influence of Sulfur on the optical properties of the AgInSe1.8S0.2 thin films. The UV/Visible measurements indicated a reduction in the energy band gap to 1.78 eV for AgInSe1.8S0.2 at 500 K, making these films potentially suitable for photovoltaic applications. These thin films exhibited donor characteristics, with an increase in electron concentration observed with higher Sulfur content and annealing temperature.

show abstract

“…As a result, over the last few years, group II-VI compound semiconductors (II = Zn, Cd, Hg and VI = S, Se, Te) have been extensively studied because of their excellent electrical, structural, optical properties, and broadly used in optoelectronic and photovoltaic devices [10][11][12]. Among II-VI materials, CdTe has been managed to gain signi cant interest in solar cell technology and so many reports are presented due to the potential for higher PCE (18-24%) and absorption coe cient, which demand thin layer of material utilization for their manufacturing [13].…”

Section: Introductionmentioning

confidence: 99%

Improving the efficiency of ZnTe based heterojunction solar cell with In2Te3 BSF layer

Ali,

Haque,

Hossain

et al. 2023

Preprint

View full text Add to dashboard Cite

Zinc telluride (ZnTe) is considered as a favorable photovoltaic (PV) material for its desirable absorption coefficient, improved conversion efficiency, and consequently inexpensive production material requirements. The unsuitability of the solar cell structure and band alignment at the buffer/absorber and absorber/BSF interface as well as carrier recombination at the front and back metal contact prevents the probable result from being achieved. The principal objective of this research is to improve the performance of newly designed Al/ZnO/CdS/ZnTe/In2Te3/Pt solar cell and to investigate the influence of the Indium telluride (In2Te3) back surface field (BSF) layer on the performance parameters of open circuit voltage (Voc), short circuit current (Jsc), fill factor (FF), and power conversion efficiency (PCE). This simulation analyses the performance of the baseline structure Al/ZnO/CdS/ZnTe/Pt which is consider as without BSF and the proposed structure Al/ZnO/CdS/ZnTe/In2Te3/Pt which is consider as with BSF. The thickness, carrier density and bulk defect density of every layer, defect density at BSF/absorber and buffer/absorber interface, working temperature, back surface recombination velocity (SRV) as well as shunt and series resistance has been studied using SCAPS-1D simulator. The PCE has been achieved 20.20% with VOC of 2.008 V, JSC of 10.99 mA/cm2 and FF of 91.92% for the proposed solar cell with In2Te3 BSF layer by using thicknesses of around 30 nm, 30 nm, 500 nm and 100 nm for ZnO, CdS, ZnTe, and In2Te3, respectively. The present study provides the guidelines for the realization of high efficiency and thin ZnTe based solar cell in cost effective way.

show abstract

Fabrication and characterization study of ZnTe/n-Si heterojunction solar cell application

Cited by 10 publications

References 12 publications

An overview on the role of ZnTe as an efficient interface in CdTe thin film solar cells: a review

An overview on the role of ZnTe as an efficient interface in CdTe thin film solar cells: a review

Effect of Sulfur on Characterization of AgInSe_1.8S_0.2 Thin Film and n-AgInSe_1.8S_0.2 / p-Si Solar Cell

Improving the efficiency of ZnTe based heterojunction solar cell with In2Te3 BSF layer

Contact Info

Product

Resources

About

Fabrication and characterization study of ZnTe/n-Si heterojunction solar cell application

Cited by 10 publications

References 12 publications

An overview on the role of ZnTe as an efficient interface in CdTe thin film solar cells: a review

An overview on the role of ZnTe as an efficient interface in CdTe thin film solar cells: a review

Effect of Sulfur on Characterization of AgInSe1.8S0.2 Thin Film and n-AgInSe1.8S0.2 / p-Si Solar Cell

Improving the efficiency of ZnTe based heterojunction solar cell with In2Te3 BSF layer

Contact Info

Product

Resources

About

Effect of Sulfur on Characterization of AgInSe_1.8S_0.2 Thin Film and n-AgInSe_1.8S_0.2 / p-Si Solar Cell