Fabrication and characterization of intergrown Bi4Ti3O12-based thin films using a metal-organic precursor solution

Chemical Processing and Characterization of Ferroelectric (K,Na)NbO3 Thin Films

“…[8][9][10] In this process, several factors, such as the selection of starting materials and the optimization of chemical compositions as well as the processing conditions, strongly affect the crystallographic phase, crystallinity, microstructures, and electrical properties of the resultant thin films. [11][12][13][14] Although KNN thin films fabricated by CSD have been reported, 4,15) their ferroelectric properties have not been sufficiently characterized. Recently, the authors have reported the piezoelectric properties of chemically derived perovskite KNN thin films.…”

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi₄Ti₄O₁₅-Bi₄Ti₃O₁₂ Thin Films

“…However, the P r decreases with the further increase of annealing temperature above 700ºC, which indicate that the higher annealing above 700 will damage the ferroelectric properties. Although the P r of 18.9µC/cm 2 for BIT-SBT films prepared in this study is higher than the P r of 16µC/cm 2 for SBT-BIT films prepared by PLD [6] and the P r of 10µC/cm 2 for SBT-BIT films prepared by CSD [9] , the E c of 142kV/cm is Fig. 2 P-E hysteresis loops of SBT-BIT, SBT and BIT thin films annealed at 700 Fig.…”

“…Bismuth-layered-structure ferroelectrics (BLSF) thin films have been widely investigated for application in several electronic thin-film devices due to the excellent fatigue properties and lead-free chemical composition [1,2] . Recently, intergrowth-superlattice-structured BLSFs materials, such as Bi 3 TiNbO 9 -Bi 4 Ti 3 O 12 (BTN-BIT), Bi 2 MoO 6 -Bi 3 TiNbO 9 (BM-BTN), Bi 2 WO 6 -Bi 3 TiNbO 9 (BW-BTN) and Bi 4 Ti 3 O 12 -SrBi 4 Ti 4 O 15 (BIT-SBT) have attracted much interest as a result of polarization enhancement by the crystal lattice distortion of pseudo-perovskite layers through the Bi 2 O 2 layer [3][4][5][6][7][8][9] . Among several superlattice-structured Bi-based compounds, BIT-SBT has been attractive due to their larger ferroelectricity compared with constituent BIT and SBT which prepared by pulsed laser deposition (PLD) and chemical solution deposition (CSD) [6][7][8][9] .…”

“…Recently, intergrowth-superlattice-structured BLSFs materials, such as Bi 3 TiNbO 9 -Bi 4 Ti 3 O 12 (BTN-BIT), Bi 2 MoO 6 -Bi 3 TiNbO 9 (BM-BTN), Bi 2 WO 6 -Bi 3 TiNbO 9 (BW-BTN) and Bi 4 Ti 3 O 12 -SrBi 4 Ti 4 O 15 (BIT-SBT) have attracted much interest as a result of polarization enhancement by the crystal lattice distortion of pseudo-perovskite layers through the Bi 2 O 2 layer [3][4][5][6][7][8][9] . Among several superlattice-structured Bi-based compounds, BIT-SBT has been attractive due to their larger ferroelectricity compared with constituent BIT and SBT which prepared by pulsed laser deposition (PLD) and chemical solution deposition (CSD) [6][7][8][9] . However, up to now, the intergrowth mechanism of Bi 4 Ti 3 O 12 -based intergrowth-superlattice-structured films has not been studied well and the synthesis of intergrowth SBT-BIT films sol-gel derived has not been reported.…”