Fabrication and Characterization of GaN/Polymer Composite p-n Junction with PEDOT Nanoparticle Interface Layer

Abstract

A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3--glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1 × 10 19 cm −3 was grown by metal-organic chemical vapor deposition. The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V ) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor of the structure without PEDOT nanoparticle interface layer is 12.9. However, the ideality factor of the hybrid structure with PEDOT nanoparticle interface layer is obtained as 1.9. The value of ideality factor is dramatically decreased by inserting the PEDOT nanoparticle interface layer.

Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures

“…All values of the ideality factors are among the lowest reported values compared to those of PEDOT:PSS deposited on n-GaN via spin-coating that range from 1.3 to 12.9 23,26,43,44 . They signify the high quality of the hybrid interface with a low defect density and emphasize the advantage of oCVD as being a suitable deposition technique for the fabrication of high-quality hybrid inorganic/ organic interfaces.…”

“…This way, we can compare the performance of different devices and also develop strategies for optimization. Hybrid inorganic-organic diodes consisting of conductive organic layers on GaN are commonly analyzed in the frame of a Schottky model 23,26,43,44 . The Schottky model refers to a metal-semiconductor contact where an electronic barrier forms at the interface 45 .…”

GaN meets organic: technologies and devices based on gallium-nitride/organic hybrid structures

“…GaN is suitable as an inorganic material in the model system, as it is sufficiently well analysed and its properties can be reproducibly well defined. Among many organic materials, GaN was combined with poly(3-hexylthiophene) (P3HT) [75,76,83,89], poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) [79,81], pentacene [39], poly (9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) [77], poly [2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) [85] or copper phthalocyanine (CuPc) [34].…”

The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors

“…Furthermore, the PEDOT: PSS film can be formed only by spin-coating onto the substrate and subsequent baking in air. There are some investigations in regard to the transparent Schottky contact of PEDOT:PSS on ZnO single crystalline substrate and GaN epilayer, exhibiting rectifying good properties and photoelectrical or photovoltaic characteristics [26][27][28][29].…”