2017
DOI: 10.1016/j.jeurceramsoc.2017.02.023
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Fabrication and characterization of a new-style structure capillary channel in reaction bonded silicon carbide composites

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Cited by 21 publications
(13 citation statements)
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“…It was thus demonstrated that the presence of a low quantity of liquid during the SiC sintering at 1970°C for 6 hours was able to control the grain growth kinetic and the microstructure during the dissolution-precipitation transformation of β-SiC to α-SiC by generating a core/rim microstructure [12]. Several recent studies have also evidenced dissolution-precipitation processes during the infiltration of molten silicon into B4C-based materials [13][14][15].…”
Section: Introductionmentioning
confidence: 92%
“…It was thus demonstrated that the presence of a low quantity of liquid during the SiC sintering at 1970°C for 6 hours was able to control the grain growth kinetic and the microstructure during the dissolution-precipitation transformation of β-SiC to α-SiC by generating a core/rim microstructure [12]. Several recent studies have also evidenced dissolution-precipitation processes during the infiltration of molten silicon into B4C-based materials [13][14][15].…”
Section: Introductionmentioning
confidence: 92%
“…Because the pressureless sintered B 4 C/C(graphite) composites have a porosity of about 25–38%, the liquid silicon could be conveniently infiltrated into the interior of the composites [ 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 ], subsequently reacting with B 4 C and graphite to produce the silicon carbide [ 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 ]. While the boron carbide reacted only partially [ 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 ], the graphite reacted completely with silicon producing silicon carbide [ 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 ]. The residual boron carbide and silicon existed within the matrix of the composite [ 40 , 41 , 42 , 43 , 44 , 45 , 46 <...…”
Section: Introductionmentioning
confidence: 99%
“…While the boron carbide reacted only partially [ 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 ], the graphite reacted completely with silicon producing silicon carbide [ 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 ]. The residual boron carbide and silicon existed within the matrix of the composite [ 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 ] and together with silicon carbide gave rise to the B 4 C-SiC-Si composites [ 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 ]. The pressureless sintered B 4 C/C(graphite) composites are thus transformed into the B 4 C-SiC-Si composites via the silicon infiltration process [ 40 ,…”
Section: Introductionmentioning
confidence: 99%
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“…Zhang et al found that B 4 C could be reinforced by introducing SiC through spark plasma sintering (SPS) at 1800°C; the resulting fracture toughness was 6.8 ± 0.2 MPa·m 1/2 . Song et al fabricated reaction‐bonded SiC composites with unique capillary channels using B 4 C powder mixtures with an appropriate multimodal particle‐size distribution to promote liquid silicon infiltration, and obtained fracture toughness as high as 6.2 ± 0.4 MPa·m 1/2 . To further enhance the fracture toughness of materials, Clegg et al synthesized bionic layered ceramics.…”
Section: Introductionmentioning
confidence: 99%