Fabrication and Characterization of ⟨100⟩-Oriented Quasi-single Crystalline Cu Lines

Abstract

Nanotwinned copper (nt-Cu) films with ⟨111⟩ crystal orientation were electroplated on Si wafers by pulse plating, with original grain size of ∼1.4 μm. By patterning and annealing the nt-Cu film at 450–500 °C for 1 h, we can grow a large number of ⟨100⟩-oriented quasi-single crystal Cu lines that are 200 and 500 μm in length and 60 μm in width. We perform anisotropic grain growth on a Si substrate to fabricate quasi-single crystal Cu lines array of ⟨100⟩ crystal orientation. These large ⟨100⟩ Cu single crystals may have potential applications as interconnects in three-dimensional integrated circuit technology.