Fabrication and characterization of 100-nm In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As double-gate HEMTs with two separate gate controls

Wichmann, Nicolas; Duszynski, I.; Wallart, X.; Bollaert, S.; Cappy, A.

doi:10.1109/led.2005.854353

Cited by 26 publications

(23 citation statements)

References 6 publications

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“…Two opposite gate electrodes control the total electron density in the channels as well as the carrier shift between them in DM operation. The only difference with respect to a DG--HEMT [2][3][4][5][6] is that the channel is divided into two regions: a high-µ undoped channel and a low-µ channel…”

Section: Physical Modelmentioning

confidence: 99%

“…To further improve their behavior, alternative solutions based on an evolution of the standard HEMT design have been proposed, as the double-gate (DG) HEMT, a HEMT with two gates placed on each side of the conducting InGaAs channel [2][3][4][5][6]. The progress of the DG-HEMT technology has allowed the design and fabrication of III-V velocity modulation transistors (VMTs) [7,8].…”

Section: Introductionmentioning

confidence: 99%

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Monte Carlo Analysis of the Dynamic Behavior οf InAlAs/InGaAs Velocity Modulation Transistors: A Geometrical Optimization

et al. 2011

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The influence of the geometry on the dynamic behavior of InAlAs/InGaAs velocity modulation transistors is analyzed by means of a Monte Carlo simulator in order to optimize the performance of this new type of transistor. In velocity modulation transistors, based on the topology of a double-gate high electron mobility transistor, the source and drain electrodes are connected by two channels with different mobilities, and electrons are transferred between both of them by changing the gate voltages in differential mode. Consequently, the drain current is modulated while keeping the total carrier density constant, thus in principle avoiding capacitance charging/ discharging delays. However, the low values taken by the transconductance, as well as the high capacitance between the two gates in differential-mode operation, lead to a deficient dynamic performance. This behavior can be geometrically optimized by increasing the mobility difference between the two channels, by increasing the channel width and, mainly, by reducing the gate length, with a higher immunity to short channel effects than the traditional architectures.

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Section: Physical Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Monte Carlo Analysis of the Dynamic Behavior οf InAlAs/InGaAs Velocity Modulation Transistors: A Geometrical Optimization

et al. 2011

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“…Thus, the double-gate ͑DG͒ HEMT, a HEMT with two gates placed on each side of the conducting InGaAs channel, has been recently developed. [1][2][3][4][5] The progress of the DG-HEMT technology allows the design and fabrication of InP-based velocity modulation transistors ͑VMTs͒. The concept of VMT was proposed by Sakaki 6 in 1982 and the first transistor was realized by Cohen et al 7 in 1997 on a GaAs/AlGaAs heterostructure.…”

Section: Fabrication and Fundamentals Of Operation Of An Inalas/ingaamentioning

confidence: 99%

“…In order to characterize the VMT in differential mode ͑application of different voltages on each gate electrode͒ the first gate metallization ͑gate 1͒ must overlap only one mesa sidewall, while keeping a perfect gate alignment. 3 In order to perform the electrical characterization of our VMTs, we define the DC gate voltages by means of two terms: a common mode bias voltage V Goff that controls the level of depletion under both gates and allows adjusting the total amount of electrons in the channel N T ͑and therefore the drain current level͒ and a differential potential V Gdiff / 2 that modulates the population of the high and low mobility channels. As a result, the gate voltages are defined as follows:…”

Section: Fabrication and Fundamentals Of Operation Of An Inalas/ingaamentioning

confidence: 99%

Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

Wichmann

Vasallo

Bollaert

et al. 2009

Applied Physics Letters

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We report the design, fabrication, and characterization of an InP-based InAlAs/InGaAs velocity modulation transistor (VMT) based on the double-gate high electron mobility transistor topology. When electrons are transferred between two channels with different mobility, the drain current is modulated while keeping the total carrier density constant. For the fabrication of the transistor, the epitaxial growth has been optimized in order to accomplish the maximum mobility difference between the two active channels. DC characteristics of our VMT have been extracted and an ensemble Monte Carlo simulator is employed to study the microscopic behavior of the fabricated device. The numerical analysis of the carrier density and velocity variation with the gate bias in differential mode demonstrates the actual velocity modulation operation of the fabricated transistors.

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“…To check this statement, we have calculated the values of fmax for the 100 nm-gate devices. For such a calculation, the unilateral gain is obtained from the Y-parameters of the devices taking into account the gate resistances measured in the real devices [4]- [5]. This is an important point since in the DG-HEMTs the gate resistance is nearly one half that of the standard HEMTs (RG=17 Q/mm and 38 Q/mm, respectively), as it benefits from two gates in parallel.…”

Section: Monte Carlo Modelmentioning

confidence: 99%

Monte Carlo Comparison Between InP-Based Double-Gate and Standard HEMTs

Vasallo

Wichmann

Bollaert

et al. 2006

2006 European Microwave Integrated Circuits Conference

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The intrinsic static and dynamic performance of InAlAs/InGaAs Double-Gate High Electron Mobility Transistors (DG-HEMTs) is studied by means of an ensemble 2D Monte Carlo simulator. Our model allows going deeply into the physical behavior of this novel device in comparison with similar standard HEMTs. Different gate lengths are analyzed in order to check the attenuation of short-channel effects expected in the DG-structures. The intrinsic cut-off frequencyfc of the DG-HEMTs is found to be similar to that of HEMTs, but the higher values of the figures of merit g,,, I gd and Cgs I Cgd lead to an improvement Offr Index Terms Double-Gate, HEMTs, Monte Carlo simulation.

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Fabrication and characterization of 100-nm In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As double-gate HEMTs with two separate gate controls

Cited by 26 publications

References 6 publications

Monte Carlo Analysis of the Dynamic Behavior οf InAlAs/InGaAs Velocity Modulation Transistors: A Geometrical Optimization

Monte Carlo Analysis of the Dynamic Behavior οf InAlAs/InGaAs Velocity Modulation Transistors: A Geometrical Optimization

Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

Monte Carlo Comparison Between InP-Based Double-Gate and Standard HEMTs

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