Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL

Bousseksou, Adel; Bouchoule, S.; Kurdi, M. El; Strassner, M.; Sagnes, I.; Crozat, P.; Jacquet, J.

doi:10.1007/s11082-007-9060-1

Cited by 13 publications

(12 citation statements)

References 20 publications

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“…The high thermal conductivity value of Table 1 was used for the dielectric materials in the calculation The R th values measured on the fabricated chips are reported in Table 2. The value previously measured for a 1/2-VCSEL chip with InP/InGaAlAs Bragg mirror on InP substrate (Bousseksou et al 2006) is also reported for comparison. As can be seen the GaAs/AlAs hybrid mirror leads to the best R th values as predicted by the simulations.…”

Section: /2-vcsel Fabrication and Thermal Characterizationmentioning

confidence: 82%

“…Prior to VECSEL operation, the thermal resistance of the 1/2-VCSEL chips has been estimated following the method used in Bousseksou et al (2006) for electrically pumped VECSEL. The effective thermal resistance R th is deduced from the shift of the half-cavity mode peak wavelength (corresponding to the photoluminescence signal -PL-) with both absorbed CW pump power, and temperature (measured at low focused power).…”

Section: /2-vcsel Fabrication and Thermal Characterizationmentioning

confidence: 99%

“…However, the thermal conductivity of quaternary materials used in InP-based devices is really poor compared to that of GaAs-based devices emitting around 1 µm. For this reason, while more than 500 mW CW output power has been demonstrated on GaAs for optically pumped (Kuznetsov et al 1997) and electrically pumped GaAs-based short-wavelength VECSELs, the excessive heating of the active layer arising in InP-based 1.55 µm structures generally limits the maximum output power to few milliwatts (Symonds et al 2004a), or even less for electrically pumped devices (El Kurdi et al 2004;Bousseksou et al 2006). This heating effect is particularly critical for large diameter devices, but also exists in small diameter VCSELs, and various heat dissipation schemes have been proposed to overcome this limitation.…”

Section: Introductionmentioning

confidence: 99%

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Thermal optimization of 1.55 μm OP-VECSEL with hybrid metal–metamorphic mirror for single-mode high power operation

et al. 2008

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We report on the thermal design and the characterization of InP-based 1.55 µm wavelength large diameter (∼100 µm) optically pumped vertical external cavity surface emitting lasers (OP-VECSELs). The device is thermally optimized for high power (>70 mW) room-temperature (RT) continuous-wave (CW) single-mode operation. Efficient bottom heat dissipation in the 1/2-VCSEL chip is obtained thanks to the use of a hybrid metalmetamorphic GaAs/AlAs mirror integrated to the InP-based active region, and to subsequent soldering on a SiC substrate. A single-mode output power of 77mW is obtained under CW-RT laser operation, limited by the pump power. Moreover thermal simulations and characterizations of the 1/2-VCSEL chip show that even higher power could be obtained at higher pumping levels, using a CVD diamond substrate.

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Section: /2-vcsel Fabrication and Thermal Characterizationmentioning

confidence: 82%

Section: /2-vcsel Fabrication and Thermal Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Thermal optimization of 1.55 μm OP-VECSEL with hybrid metal–metamorphic mirror for single-mode high power operation

et al. 2008

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“…Optical and Electrical Pumping VECSEL lasers have been made with two types of excitation: optical [18,22] and electrical (Chapter 7) [92,93,141,[150][151][152][153]. Electrical excitation of the laser by a diode current injection across a p-n junction is very appealing, as it requires only a simple low-voltage current source to drive the laser, rather than separate pump lasers with their pump optics and power supplies.…”

Section: 33mentioning

confidence: 99%

“…Using wafer fusion with GaAssubstrate-based mirrors, the InGaAlAs/InP active region has demonstrated still higher VECSEL powers of 2.6 W [97,98]. Electrically pumped VECSELs have also been fabricated with 1550 nm emission wavelengths using InP-based material system [92,93,152].…”

Section: Demonstrated Power Scaling and Wavelength Coveragementioning

confidence: 99%

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Kuznetsov¹

2010

Semiconductor Disk Lasers

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Since its invention and demonstration in 1960, several types of laser have been developed, such as solid-state, semiconductor, gas, excimer, and dye lasers [1]. Today, lasers are used in a wide range of important applications, particularly in optical fiber communication, optical digital recording (CD, DVD, and Blu-ray), laser materials processing, biology and medicine, spectroscopy, imaging, entertainment, and many others. A number of properties enable the application of lasers in these diverse areas, each application requiring a particular combination of these properties. Some of the most important laser properties are laser emission wavelength; output optical power; method of laser excitation, whether by optical pumping or electrical current injection; laser power consumption and efficiency; high-speed modulation or short pulse generation ability; wavelength tunability; output beam quality; device size; and so on. Thus, optical fiber communication [2], a major application that enables modern Internet, commonly requires lasers with emission wavelengths in the 1.55 mm lowloss band of glass fibers and with single-transverse mode output beams for coupling into single-mode optical fibers. Typically, a given laser type excels in some of these properties, while exhibiting shortcomings in others. For example, by using different material compositions and structures, the most widely used semiconductor diode laser [3][4][5][6][7][8][9][10][11][12] can cover a wide range of wavelengths from the ultraviolet (UV) to the mid-IR, can be advantageously driven by diode current injection, and is very compact and efficient. However, the good beam quality, that is, single-transverse mode nearcircular beam operation, can be typically achieved in semiconductor lasers only for output powers below 1 W. Much higher power levels are achievable from semiconductor lasers only with large aspect ratio highly multimoded poor quality optical beams. On the other hand, the solid-state lasers [13,14], including fiber lasers [15], can emit hundreds of watts of output power with excellent beam quality, however, their emission wavelengths are restricted to discrete values of electronic transitions in ions, such as the classic 1064 nm wavelength of the Nd:YAG laser, making them Semiconductor Disk Lasers. Physics and Technology. Edited by Oleg G. Okhotnikov

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Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2 W continuous-wave output power

et al. 2010

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Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL

Cited by 13 publications

References 20 publications

Thermal optimization of 1.55 μm OP-VECSEL with hybrid metal–metamorphic mirror for single-mode high power operation

Thermal optimization of 1.55 μm OP-VECSEL with hybrid metal–metamorphic mirror for single-mode high power operation

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2 W continuous-wave output power

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