2013
DOI: 10.1016/j.ijhydene.2013.03.057
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Fabricating CdS/BiVO4 and BiVO4/CdS heterostructured film photoelectrodes for photoelectrochemical applications

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Cited by 37 publications
(22 citation statements)
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“…Under 100 mW cm À2 light intensity, the photocurrent density recorded at 1.23 V was 0.73 mA cm À2 vs. SCE. The photocurrent achieved in our case is higher than that of previously reported photoelectrodes in the absence of the sacrificial agent and electrons or hole scavenger [12,[33][34][35][36][37][38]. In addition, fewer spikes in the chopped pattern indicate high stability of the films.…”
mentioning
confidence: 51%
“…Under 100 mW cm À2 light intensity, the photocurrent density recorded at 1.23 V was 0.73 mA cm À2 vs. SCE. The photocurrent achieved in our case is higher than that of previously reported photoelectrodes in the absence of the sacrificial agent and electrons or hole scavenger [12,[33][34][35][36][37][38]. In addition, fewer spikes in the chopped pattern indicate high stability of the films.…”
mentioning
confidence: 51%
“…This phenomenon was attributed to the photo-corrosion of metal sulfide semiconductors. Many workers had reported this phenomenon [47,48].…”
Section: Photoelectrochemical Properties Of Znin 2 S 4 /Tio 2 Heterosmentioning
confidence: 99%
“…[10][11][12][13][14][15][16][17] However, many studies have revealed that the PEC activity of pure CdS is severely limited because of the highly photogenerated carrier recombination. [27][28][29][30] For example, complex CdS architec-tures, such as three-dimensional (3D), [10,11] inverse opal arrays [12][13][14] and branched nanoarrays [15][16][17] have been fabricated. [18][19][20][21][22] The sulfide/sulfite ions as hole scavengers are always necessary for stable operation.…”
Section: Introductionmentioning
confidence: 99%
“…[20] Numerous modification methods have been employed to enhance the PEC activity and stability of CdS photoanode, including morphology manipulation, [23][24][25] doping [15,26] and heterojunction construction. [27][28][29][30] For example, complex CdS architec-tures, such as three-dimensional (3D), [10,11] inverse opal arrays [12][13][14] and branched nanoarrays [15][16][17] have been fabricated. The periodically ordered geometry provides multiple scattering centers and reduces electron-hole separation distance, thereby facilitating charge generation, separation and transport.…”
Section: Introductionmentioning
confidence: 99%
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