Extremely stable bare hematite photoanode for solar water splitting

Film Flip and Transfer Process to Enhance Light Harvesting in Ultrathin Absorber Films on Specular Back‐Reflectors

“…This can lead to significant optical losses and substantial decrease in the amount of light absorbed in the ultrathin absorber (productive absorption). [6,9,18,[10][11][12][13][14][15][16][17] In order to passivate the silvergold alloy layer and suppress tarnishing during the subsequent hematite film deposition, three thin layers of SnO 2 deposited at increasing temperatures and oxygen pressures were used. [6] Silvergold alloys are more chemically stable than pristine silver, but their reflectivity degrades significantly at high gold concentrations (≥15 at%), see Figure S1 (Supporting Information).…”

Synthesis of Host‐Guest Hematite Photoelectrodes for Solar Water Splitting

“…This can be explained because TiO 2 underlayer can play two roles, as a Ti doping source and as blocking layer. Recent works showed this bifunctional role of TiO 2 resulting in improving charge transfer and separation efficiency of α‐Fe 2 O 3 films . From the Mott‐Schottky analysis, the TiO 2 −H sample revealed a donor density, N D , of almost one order of magnitude higher than TEOS−H sample, which may prove that the TiO 2 underlayer acts as a doping agent, whereas the TEOS underlayer influences in a more significant way to the α‐Fe 2 O 3 film growth.…”

“…For assessing the quality of the selected underlayer (TiO 2 ), a direct comparison with a TEOS underlayer was performed. TEOS was demonstrated as a suitable pre‐treatment for α‐Fe 2 O 3 photoelectrodes deposited by spray pyrolysis, because it allows better growth of α‐Fe 2 O 3 thin films, reducing the interfacial strain between the FTO layer and the α‐Fe 2 O 3 crystals . A Fe(AcAc) 3 precursor deposited volume of 42 mL was selected based on previous optimized results, yielding a semiconductor thickness of ca .…”

“…A Fe(AcAc) 3 precursor deposited volume of 42 mL was selected based on previous optimized results, yielding a semiconductor thickness of ca . 20 nm …”

“…TEOS was demonstrated as a suitable pre-treatment for α-Fe 2 O 3 photoelectrodes deposited by spray pyrolysis, because it allows better growth of α-Fe 2 O 3 thin films, reducing the interfacial strain between the FTO layer and the α-Fe 2 O 3 crystals. [22,23] A Fe 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 (AcAc) 3 precursor deposited volume of 42 mL was selected based on previous optimized results, yielding a semiconductor thickness of ca. 20 nm.…”