Extremely low temperature growth of ZnO by atomic layer deposition

Guziewicz, E.; Kowalik, I.A.; Godlewski, M.; Kopalko, K.; Osinniy, V.; Wójcik, Anna; Yatsunenko, S.; Łusakowska, E.; Paszkowicz, W.; Guziewicz, M.

doi:10.1063/1.2836819

Cited by 242 publications

(197 citation statements)

References 29 publications

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“…• C, as recently shown for ZnO [8]. This in turn makes this method ideal for low temperature budget applications like hybrid organic/inorganic and 3D electronics [9][10][11] or in connection with DFS like (Ga,Mn)As [12,13].…”

Section: Introductionmentioning

confidence: 90%

Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures

et al. 2011

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We report on an extensive structural and electrical characterization of undergate dielectric oxide insulators Al 2 O 3 and HfO 2 grown by atomic layer deposition. We elaborate the atomic layer deposition growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the metal-insulator-semiconductor structure. Our best devices survive energizing up to ≈ 3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 × 10 13 cm −2 , which promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.

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Section: Introductionmentioning

confidence: 90%

Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures

et al. 2011

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“…The ALD technique has been successfully used in the past to deposit undoped and Al-doped ZnO thin films using diethyl zinc (DEZ), trimethyl aluminum (TMA), and water as the precursors. [7][8][9][10][11][12][13][14] In this work, we have investigated in detail the ALD process for depositing thin films of Al-doped ZnO and determined the extent of doping achievable using x-ray fluorescence, Seebeck coefficient, and optical reflectivity measurements.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of Al-doped ZnO thin films

Tynell

Yamauchi

Karppinen

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inAtomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al 2 O 3 on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al 2 O 3 phase and no further carrier doping of ZnO is observed.

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“…Here use of the ALD method is very crucial. Once growth conditions were optimized ZnO films showing only the band edge emission were obtained by us [4][5][6]. By coating of organic material with such ZnO films devices stable in time were constructed [7,38] (see Fig.…”

Section: Hybrid Zno/organic Materials Structures For Optoelectronic Anmentioning

confidence: 99%

Zinc oxide for electronic, photovoltaic and optoelectronic applications

Godlewski

Guziewicz

Kopalko

et al. 2011

Low Temperature Physics

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We demonstrate that the atomic layer deposition (ALD) technique has large potential to be widely used in a production of ZnO films for applications in electronic, photovoltaic (PV) and optoelectronic devices. Low growth temperature makes the ALD-grown ZnO films suitable for construction of various semiconductor/organic material hybrid structures. This opens possibilities of construction of novel devices based on very cheap organic materials. This includes organic light emitting diodes and PV cells of the third generation, as discussed in the present work.

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Extremely low temperature growth of ZnO by atomic layer deposition

Cited by 242 publications

References 29 publications

Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures

Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures

Atomic layer deposition of Al-doped ZnO thin films

Zinc oxide for electronic, photovoltaic and optoelectronic applications

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