Extending the Absorption Limit of BiVO₄ Photoanodes with Hydrogen Sulfide Treatment

Abstract

The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/solr.202200129.

Laser-induced deposition of Ni, Co-doped FeOOH cocatalysts on WO3 photoanodes and elucidating their roles in water oxidation in terms of carrier dynamics

“…In a PEC cell, a semiconductor electrode converts light energy into chemical energy that is stored in hydrogen molecules. Among the transition metal oxide n-type semiconductor materials, TiO 2 , 3,4 α-Fe 2 O 3 , 5–9 BiVO 4 , 10,11 and WO 3 (ref. 12 and 13) are the most frequently employed photoanode materials in PEC cells.…”

Manipulating the surface states of BiVO4through electrochemical reduction for enhanced PEC water oxidation

“…The introduction of FeOOH slightly reduces the band gap by 0.04 eV, which is favorable for light absorption. 25 The water contact angles of BVO and −0.8/BVO/Fe are 145° and 138° respectively as shown in Fig. S6 †.…”

Effect of sulfur doping on the photocatalytic performance of sputtered BiVO4 thin films

“…20) Cation doping might result in a downward shift of the conduction band which recedes from the water reduction potential position. 21) Sulfur has higher orbital energy than oxygen, and the substitution of oxygen with sulfur in BiVO 4 shifts the VB upward, resulting in a decrease in its bandgap. Experimentally, the substitution of oxygen with sulfur might be difficult, because the bonding energy of metals (or non-metals) with oxygen is higher than their bonding energy with sulfur (for example, V-O, 637 kJ mol −1 ; V-S, 449 kJ mol −1 at 298 K).…”

“…Experimentally, the substitution of oxygen with sulfur might be difficult, because the bonding energy of metals (or non-metals) with oxygen is higher than their bonding energy with sulfur (for example, V-O, 637 kJ mol −1 ; V-S, 449 kJ mol −1 at 298 K). 21) A few studies on sulfur doping of BiVO 4 thin films using various methods have been reported. [20][21][22][23] This study is focused on sulfur doping of BiVO 4 to enhance the thin-film PEC performance using the RF sputtering method and post-sulfurization.…”

“…21) A few studies on sulfur doping of BiVO 4 thin films using various methods have been reported. [20][21][22][23] This study is focused on sulfur doping of BiVO 4 to enhance the thin-film PEC performance using the RF sputtering method and post-sulfurization. First, BiVO 4 thin films were deposited using RF sputtering.…”