2020
DOI: 10.1109/jphot.2020.3037220
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Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs With an ITO Emission Window Layer

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Cited by 7 publications
(2 citation statements)
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“…One of the key concerns rises from the difficulties for smaller chip transfer. Although it is possible to fabricate micro LED chips with sizes smaller than 5 m [6,7] these days, it is difficult to mass-transfer tiny devices onto different substrates, not to mention the high precision that requires in this job. In the past, 8 m by 15m devices have been demonstrated with an estimated array size of 100 by 100 [8].…”
Section: Introductionmentioning
confidence: 99%
“…One of the key concerns rises from the difficulties for smaller chip transfer. Although it is possible to fabricate micro LED chips with sizes smaller than 5 m [6,7] these days, it is difficult to mass-transfer tiny devices onto different substrates, not to mention the high precision that requires in this job. In the past, 8 m by 15m devices have been demonstrated with an estimated array size of 100 by 100 [8].…”
Section: Introductionmentioning
confidence: 99%
“…Meanwhile, gallium nitride related materials are highly efficient and resilient towards such surface recombination effect, such that devices with sizes smaller than 10 m were reported with good illumination capability [2,7].Thus another possible solution can be applied for high resolution display: the color conversion method. If substances with visible light emission capability can be excited by these monochromatic GaN based micro LEDs, the full-color target can be achieved.…”
Section: Introductionmentioning
confidence: 99%