In general, the depopulation of excited states in QD can occur through a variety of radiative and nonradiative decaying processes. Apart from intrinsic radiative recombination responsible for emitting photons, several competing deactivation processes such as nonradiative phononassisted recombination, carrier trapping at defect states, and Auger recombination always take place in QDs. [2,6] In particular, the Auger process mediated by Coulomb interactions is highly efficient in QDs due to the proximity of interacting charges and the momentum conservation compared with bulk counterparts. [7][8][9][10][11][12][13][14][15] Although phonon-assisted recombination and trapping processes can be eliminated in well-passivated QDs, it is impossible to avoid Auger-type interactions when extra excitons come into play. Hence, Auger recombination is usually the predominant decay process in the regime of multiple excitons even in well-passivated QDs and is the main nonradiative energy dissipation pathway of multicarrier states, affecting all aspects of physical properties. [16][17][18][19][20][21][22] The Auger process has commonly been considered a detrimental phenomenon since it induces carrier losses. However, it can also be used to improve the performance of photovoltaic devices or electron emission from photocathodes if the hot carrier can be extracted before its intraband relaxation. [23,24] Therefore, controlling the Auger process is a prerequisite for a better design of optimal devices.Depending on QD size, structure, and exciton multiplicity, the typical characteristic times of Auger recombination vary from a few to a few hundreds of picoseconds, which is still orders of magnitude shorter than radiative recombination time. [10,25] This fast time scale of the Auger process generally causes very low PL efficiencies of multicarrier states, hindering the realization of a range of QD-based applications, including lasers, light-emitting diodes, and single-photon sources that require high emissivity of multicarrier states. For example, in the case of QD-based LED, a slight imbalance between electron and hole injection currents can induce charging of the QD layer, which lowers the external quantum efficiency by increasing nonradiative losses due to Auger recombination in charged QDs. [17,26] Hence, suppression of the Auger process is one of the most important goals for developing next-generation QD-based optoelectronic applications.Previous studies of the Auger process have primarily focused on wavefunction engineering and control of confinement potential. [3,[28][29][30][31][32][33][34][35][36][37] Wavefunction engineering is a common Controlling the transition dipole moment is extremely important for various photophysical characteristics in semiconductors. Especially, suppression of Auger recombination in quantum dots (QDs) is essential for the development of novel applications, including bioimaging, lasing, and optoelectronic devices. To date, most of the studies on the Auger process are conducted on the basis of manipulatin...