Experimental Study on Electrical Characteristics of Large-Size Vertical β-Ga₂O₃ Junction Barrier Schottky Diodes

1 mm2, 3.6 kV, 4.8 A NiO/Ga2O3 Heterojunction Rectifiers

“…6 shows a compilation of reported Ron vs V B results reported in the literature for Ampereclass rectifiers and includes conventional Schottky barrier or JBS rectifiers and NiO/Ga 2 O 3 heterojunction rectifiers. 23,[33][34][35][36][37][38][39][40][41][42][43][44] The theoretical lines for the 1D unipolar limits of SiC, GaN and Ga 2 O 3 are also shown. The result in this work is the first demonstration of large area, Ampere-class Ga 2 O 3 rectifiers surpassing the theoretical limits of GaN and SiC.…”

“…1,3,23,[32][33][34][35][36][37][38] Another crucial focus is to have larger area devices to achieve high conduction currents, while simultaneously retaining the kV breakdown characteristics. 23,32,[34][35][36][37][38][39][40][41][42][43] Qin et al 1 recently reviewed the status of packaging and device performance of Ampere-class Ga 2 O 3 Schottky, Junction Barrier Schottky, heterojunction rectifiers and MOSFETs and their switching recovery characteristics, and surge-current and over-voltage ruggedness.…”

Superior high temperature performance of 8 kV NiO/Ga2O3vertical heterojunction rectifiers

“…The switching characteristics of the rectifiers are also of paramount interest, since they need fast recovery times and the ability to switch large currents. [45][46][47][48][49][50][51][52][53][54][55][56][57][58][59][60][61][62][63] Fig. 9 shows the temperature dependence of (top) Schottky rectifiers and (bottom) NiO/ Ga 2 O 3 heterojunction rectifiers of reverse recovery characteristics in which the devices were switched from 60 mA forward current to 0 V. The reverse recovery times are B 26 AE 2 ns and are tabulated in Table 1.…”

Recent progress of Ga2O3 power technology: large-area devices, packaging and applications

“…Figures 2(a)-2(c) benchmark the forward current versus V br , the forward current versus the differential specific onresistance (R on,sp ), and the R on,sp versus V br of these ampereclass Ga 2 O 3 power rectifiers and transistors. 14,15,17,19,20,[38][39][40][41][42][43][44][45][46][47][48][49] A more complete set of performance parameters of the representative devices are summarized in Table I. For power diodes, the forward current is extracted at a forward voltage (V F ) equal to 1.5 V higher than the turn-on voltage (V on ); R on,sp is the differential resistance after the diode is fully turned on.…”

“…Among the ampere-class Ga 2 O 3 diodes, the highest V br is 2040 V, which is obtained in the beveled-mesa NiO/Ga 2 O 3 HJD reported by Zhou et al 40) This device has a large on- 14,20,38,[42][43][44][45][46][47][48] JBS diode, 39,41,49) HJD, 15,19,40) and lateral MOSFET. 17) Table I.…”