Experimental study of the effect of process parameters on plasma-enhanced chemical vapour deposition of silicon nitride film

Dissociation reaction of B2H6 on TiN surfaces during atomic layer deposition: first-principles study

“…1 Nitride materials, such as silicon nitride and titanium nitride, have been deposited using conventional deposition techniques such as plasma-enhanced chemical vapor deposition (PECVD) 2,3 and low-pressure chemical vapor deposition (LPCVD). 4,5 However, the down-scaling of memory devices has required another deposition technique such as atomic layer deposition (ALD) [6][7][8] to resolve the step coverage issues of highly integrated devices. As a thin lm deposition process, ALD is the most prevalent method due to the demand for excellent step coverage and conformality of deposited thin lms.…”

Efficient passivation of solar cells by silicon nitride

“…Fig. 4 illustrates the mean lifetime values found in this study and the mean refractive indices reported in our previous work [8] versus the power process. A correlation between n and t eff was observed.…”

Overall reaction mechanism for a full atomic layer deposition cycle of W films on TiN surfaces: first-principles study

“…1 Recently, conformal lm deposition techniques, which allow precise thickness control at the atomic scale, are becoming very important. 2 Nitride materials, such as titanium nitride and silicon nitride, have been deposited using conventional deposition methods such as low-pressure chemical vapor deposition (LPCVD) 3,4 and plasma-enhanced chemical vapor deposition (PECVD). 5,6 However, development of memory devices has required another deposition technique such as atomic layer deposition (ALD) [7][8][9] to meet the demand for excellent step coverage and high conformality on extremely high aspect ratio structures.…”