Experimental investigation on the origin of direction dependence of Si (110) hole mobility utilizing ultra-thin body pMOSFETs

Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body

“…7c confirm the benefit of the volume conduction even in devices with high-k/metal gate. The V g2 dependence of G m peak for (1 1 0) devices can be attributed to the suppression of interband scattering due to increase in the energy splitting in addition to the change of the effective mass [19,20]. The advantage of double-gate mode is not visible on the (1 1 0) devices.…”

Experimental investigation on direction dependence of Si (100) and Si (110) hole mobility in ultra-thin body pFETs

“…On the other hand, in Si(110) UTB pFETs, it has been already reported that hole mobility in <110> direction is superior to that in <100> direction especially in strong quantum confinement in thin SOI thickness (t SOI ) because of the effective mass change [3,4]. However, no experimental study has been done at low temperature where the phonon scattering is suppressed, and it is still unclear whether the phonon scattering affects the direction dependence or not.…”

“…One of the demerits of UTB FETs is the degradation of electron and hole mobility due to the increase in phonon scattering by the quantum confinement [1]. Therefore, the mobility enhancement phenomena making use of quantum confinement effects are very important for practical applications [1][2][3][4]. It is known that the quantum confinement depends on not only the crystal orientation but the channel direction [4].…”

“…Therefore, the mobility enhancement phenomena making use of quantum confinement effects are very important for practical applications [1][2][3][4]. It is known that the quantum confinement depends on not only the crystal orientation but the channel direction [4]. Once the crystal orientation is fixed, the suitable channel direction should be utilized in the actual layout of transistors.…”

Mechanisms of high hole mobility in (100) nanowire pMOSFETs with width of less than 10nm

“…8 shows temperature dependence of hole mobility of a (110) planar pFET. At 300K, hole mobility remains high value even in high N inv , because the inter-subband phonon scattering is suppressed and the effective mass becomes lighter by quantum confinement effect [14]. At high temperature, the phonon scattering is stronger causing the mobility degradation.…”