Experimental Investigation on the Effects of Narrow Junction Temperature Cycles on Die-Attach Solder Layer in an IGBT Module

Lai, Wu‐Wei; Chen, Minyou; Li, Ran; Xu, Shengyou; Jiang, Nan; Wang, Xuemei; Alatise, Olayiwola; Mawby, P.A.

doi:10.1109/tpel.2016.2546944

Cited by 93 publications

(26 citation statements)

References 25 publications

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“…Several studies have aimed to address these limitations [57], [66][67][68][69][70][71]. The power cycling is conducted with the heating time t on as low as 70 ms, ∆T j = 70°C, and the mean junction temperature T jm =122°C for two types of IGBT modules in [68,69].…”

Section: Implications On Component-level Accelerated Testingmentioning

confidence: 99%

“…Instead, the absolute junction temperature plays a significant role in such a range. Power cycling tests with a combination of high ∆T j and low ∆T j are proposed in [70,71] to investigate the impact of low ∆T j within a realistic testing period. ∆T j is down to 32.8°C with T jm of 56°C in three different testing stages.…”

Section: Implications On Component-level Accelerated Testingmentioning

confidence: 99%

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Power Electronics Reliability: State of the Art and Outlook

Wang

Blaabjerg

2021

IEEE J. Emerg. Sel. Topics Power Electron.

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Section: Implications On Component-level Accelerated Testingmentioning

confidence: 99%

Section: Implications On Component-level Accelerated Testingmentioning

confidence: 99%

Power Electronics Reliability: State of the Art and Outlook

Wang

Blaabjerg

2021

IEEE J. Emerg. Sel. Topics Power Electron.

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“…This paper will put focus on the introduction of more advanced reliability metrics to predict and validate the wear-out behaviors of power semiconductors under given mission profiles. In respect to the investigations of critical components and failure mechanisms, which have been well discussed in the past work [48], [51]- [53], are out of the scope of this paper.…”

Section: Pre-assumptions and Hardware Tools For Analysismentioning

confidence: 99%

Prediction and Validation of Wear-Out Reliability Metrics for Power Semiconductor Devices With Mission Profiles in Motor Drive Application

Choi

Blaabjerg

2018

IEEE Trans. Power Electron.

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Due to the continuous demands for highly reliable and cost-effective power conversion, quantified reliability performances of the power electronics converter are becoming emerging needs. The existing reliability predictions for the power electronics converter mainly focus on the metrics of lifetime, accumulated damage, constant failure rate or Mean-Time-To-Failure (MTTF). Nevertheless, the time-varying and probabilitydistributed characteristics of the reliability, are rarely involved. Moreover, in the public literatures, there are few evidences showing that the accuracy of the predicted reliability was experimentally validated. In this paper, a more advanced metric "Cumulative Distribution Function (CDF)" is introduced to predict the reliability performance of power electronics system based on mission profiles in motor drive application. Furthermore, the accuracy of the predicted reliability metrics is verified through a series of wear-out tests in a converter testing system. It is concluded that the CDF is a very suitable metric to predict the reliability performance of converter, and it has shown good accuracy with much more reliability information compared to the existing approaches. In this method, the correct stress translation and dedicated strength tests based on mission profiles are two key factors to ensure the efficiency and accuracy of reliability prediction. I.This is the author's version of an article that has been published in this journal. Changes were made to this version by the publisher prior to publication.The final version of record is available at http://dx.

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“…At present, the health status monitoring of IGBT module based on the bond wire fatigue can be mainly divided into two aspects: steady-state monitoring and transient monitoring. The steady-state characteristic quantity mainly includes V ce_sat [23], [30], V th , K p , I SC [25], R on et al [18], and the transient electrical characteristic mainly includes switching transient time (t on , t off ) [12], [18], gate voltage current variation [26], [27] and so on.…”

Section: ) Condition Monitoring Of Bond Wire Fatiguementioning

confidence: 99%