Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry

Bagnall, Kevin R.; Saadat, Omair I.; Joglekar, Sameer; Palacios, Tomás; Wang, Evelyn N.

doi:10.1109/ted.2017.2679978

Cited by 47 publications

(17 citation statements)

References 37 publications

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“…The thermal impedance values extracted in this work are coherent with literature indicating approximately half of the total self‐heating in the first μs and a quasi steady‐state around 100 μs . GaN‐on‐SiC devices exhibit similar thermal transient characteristics with an overall 2.5× better heat dissipation.…”

Section: Resultssupporting

confidence: 85%

“…Optical measurements techniques μ‐Raman and thermo‐reflectance have be shown to successfully measure the transient thermal regime with record time‐resolutions of 10–15 and 50 ns, respectively. However, a trade‐off between spatial‐resolution, time‐resolution, and maximum time acquisition is observed.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, time‐resolved GRT (t‐GRT) has been demonstrated on GaN HEMTs with time‐resolutions of 600 ns and no limitation on the maximum acquisition time making it attractive to corroborate finite‐element simulation . However, several paper points out the necessity of time‐resolution extractions in the order of 100 ns …”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Thermal Transient Extraction for GaN HEMTs by Frequency-Resolved Gate Resistance Thermometry with Sub-100 ns Time Resolution

Cutivet

Bouchilaoun

Hassan

et al. 2018

Phys. Status Solidi A

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This paper reports on the thermal impedance measurement of GaN highelectron-mobility-transistors (HEMTs) using frequency-resolved gate resistance thermometry. Corrections methods are used to enable measurement on a very broad frequency range up to the MHz range. Transposition to timedomain is then conducted and allows, for the first time to the author's knowledge, a full determination of the device's thermal impedance with a time-resolution down to 60 ns and no limitation on the maximum time range with a single measurement technique. Measurements are performed for HEMTs with different gate-lengths and compared with literature. The experimental results demonstrate the validity and interest of the technique for the thermal impedance extraction of GaN based devices.

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Section: Resultssupporting

confidence: 85%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thermal Transient Extraction for GaN HEMTs by Frequency-Resolved Gate Resistance Thermometry with Sub-100 ns Time Resolution

Cutivet

Bouchilaoun

Hassan

et al. 2018

Phys. Status Solidi A

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show abstract

“…This leaves only the temperature and biaxial thermoelastic stress components, which can be determined using the multispectral analysis established by Choi et al [25,[32][33][34]. Typical steady-state measurement capabilities were extended to monitor the transient evolution of the thermal response of operating GaN devices by using a variable-delay laser pulse with locked-in device electrical excitation [35][36][37].…”

Section: Introductionmentioning

confidence: 99%

Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications

Lundh

Shervin

et al. 2019

Journal of Electronic Packaging

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GaN-based high-power wide-bandgap semiconductor electronics and photonics have been considered as promising candidates to replace conventional devices for automotive applications due to high energy conversion efficiency, ruggedness, and superior transient performance. However, performance and reliability are detrimentally impacted by significant heat generation in the device active area. Therefore, thermal management plays a critical role in the development of GaN-based high-power electronic and photonic devices. This paper presents a comprehensive review of the thermal management strategies for GaN-based lateral power/RF transistors and light-emitting diodes (LEDs) reported by researchers in both industry and academia. The review is divided into three parts: (1) a survey of thermal metrology techniques, including infrared thermography, Raman thermometry, and thermoreflectance thermal imaging, that have been applied to study GaN electronics and photonics; (2) practical thermal management solutions for GaN power electronics; and (3) packaging techniques and cooling systems for GaN LEDs used in automotive lighting applications.

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“…Therefore, accurate device temperature characterization is very important to reach reliability and good performance of the device. Among all techniques, micro-Raman thermometry is one of the most popular for this purpose [15][16][17], along with the electrical parameter-based thermometry [18]. Compared to an infrared technique with low-spatial resolution of about 5-10 lm, micro-Raman thermometry has a spatial resolution better than 1 lm [19].…”

Section: Introductionmentioning

confidence: 99%

Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

Chvála

Szobolovszký

Kováč

et al. 2019

Journal of Electronic Packaging

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In this paper, several methods suitable for real time on-chip temperature measurements of power AlGaN/GaN-based high-electron mobility transistor (HEMT) grown on a SiC substrate are presented. The measurement of temperature distribution on HEMT surface using Raman spectroscopy is presented. The second approach utilizes electrical I–V characteristics of the Schottky diode neighboring to the heat source of the active transistor under different dissipated power for temperature measurement. These methods are further verified by measurements with microthermistors. The features and limitations of the proposed methods are discussed. The thermal parameters of materials used in the device are extracted from the temperature distribution in the structure with the support of three-dimensional thermal simulation of the device. Thermal analysis of the multifinger power HEMT is performed. The effects of the structure design and fabrication processes from semiconductor layers, metallization, and packaging up to cooling solutions are investigated. The influence of individual layer properties on the thermal performance of different HEMT structures under different operating conditions is presented. The results show that the proposed experimental methods supported by simulation have a potential for the design, analysis, and thermal management of HEMT.

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Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry

Cited by 47 publications

References 37 publications

Thermal Transient Extraction for GaN HEMTs by Frequency-Resolved Gate Resistance Thermometry with Sub-100 ns Time Resolution

Thermal Transient Extraction for GaN HEMTs by Frequency-Resolved Gate Resistance Thermometry with Sub-100 ns Time Resolution

Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications

Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation

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