Experimental characterization of spin-
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 silicon vacancy centers in 
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-SiC

Singh, Harpreet; Анисимов, А. Н.; Nagalyuk, S. S.; Мохов, Е. Н.; Баранов, П. Г.; Suter, Dieter

doi:10.1103/physrevb.101.134110

Cited by 25 publications

(36 citation statements)

References 52 publications

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“…Based on recent low magnetic field measurements on the silicon vacancy center in SiC, T 1 (T ) is in the range of 100 µs at room temperature. 21,40 In order to obtain a measurable magnetic field dependent signal, the dipole-dipole interaction induced spin relaxation time T 1 (B) needs to be at least in the same order of magnitude. For the V1 (V2) center this can be achieved at low magnetic field strength by using C = 10 17 cm −3 (C = 3 × 10 17 cm −3 ) spin-1/2 defect concentration in the host material.…”

Section: Discussionmentioning

confidence: 99%

Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide

Bulancea-Lindvall¹,

Eiles²,

Són³

et al. 2022

Preprint

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Paramagnetic defects and nuclear spins are the major sources of magnetic field-dependent spin relaxation in point defect quantum bits. The detection of related optical signals has led to the development of advanced relaxometry applications with high spatial resolution. The nearly degenerate quartet ground state of the silicon vacancy qubit in silicon carbide (SiC) is of special interest in this respect, as it gives rise to relaxation rate extrema at vanishing magnetic field values and emits in the first near-infra-red transmission window of biological tissues, providing an opportunity for developing novel sensing applications for medicine and biology. However, the relaxation dynamics of the silicon vacancy center in SiC have not yet been fully explored. In this paper, we present results from a comprehensive theoretical investigation of the dipolar spin relaxation of the quartet spin states in various local spin environments. We discuss the underlying physics and quantify the magnetic field and spin bath dependent relaxation time T 1 . Using these findings we demonstrate that the silicon vacancy qubit in SiC can implement microwave-free low magnetic field quantum sensors of great potential.

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Section: Discussionmentioning

confidence: 99%

Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide

Bulancea-Lindvall¹,

Eiles²,

Són³

et al. 2022

Preprint

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“…4.3. Similar processes are responsible for the polarization of spins in quartet states that undergo ISC to doublet states, such as some defects in SiC (Baranov et al, 2011;Singh et al, 2020).…”

Section: Other Mechanisms For Optical Polarizationmentioning

confidence: 95%

“…However, since the number of nuclear spins that interact with the electron is very large, these small contributions can add up to very large effects. The first is a dephasing effect: due to statistical fluctuations ("spin noise", Sleator et al, 1985;Oestreich et al, 2005), the electron interacts with a fluctuating environment that can result in dephasing of the electron spin.…”

Section: Nuclear Fieldmentioning

confidence: 99%

Optical detection of magnetic resonance

Suter

2020

Magn. Reson.

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Abstract. The combination of magnetic resonance with laser spectroscopy provides some interesting options for increasing the sensitivity and information content of magnetic resonance. This review covers the basic physics behind the relevant processes, such as angular momentum conservation during absorption and emission. This can be used to enhance the polarization of the spin system by orders of magnitude compared to thermal polarization as well as for detection with sensitivities down to the level of individual spins. These fundamental principles have been used in many different fields. This review summarizes some of the examples in different physical systems, including atomic and molecular systems, dielectric solids composed of rare earth, and transition metal ions and semiconductors.1

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“…Optical Properties of VV 0 and NV − Centers in SiC Three of the most studied defects in SiC are SiV -, VV 0 , and NV − centers. [14,15,26,[91][92][93] While the SiV − centers emission is around 900 nm, [92,93] the latter two give emissions ranging from 1000 to 1300 nm. [27,73,81] The axial centers have the same symmetry (C 3v ) as the diamond NV − centers, but the basal centers have a lower symmetry (C 1h ).…”

Section: Vacancy Color Centers and Unknown Emitters In Sicmentioning

confidence: 99%

Room‐Temperature Solid‐State Quantum Emitters in the Telecom Range

et al. 2021

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Building a quantum network is the ultimate goal of quantum information science. Among the candidates to realize quantum node, quantum repeater, and quantum channel, the solid-state emitters are particularly outstanding because of the presence of the spin-photon interface. Some of the solid-state emitters such as carbon nanotubes, color centers, transition metal ions, and rare earth ions can give telecom wavelength emission at room temperature. These emitters have different origins of single-photon emission. Here, the basic properties of each kind of emitter and their progress towards applications are reviewed. This review also introduces the current efforts to improve the emitters' brightness by integrating them into nanostructures.

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Experimental characterization of spin- 32 silicon vacancy centers in 6H -SiC

Cited by 25 publications

References 52 publications

Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide

Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide

Optical detection of magnetic resonance

Room‐Temperature Solid‐State Quantum Emitters in the Telecom Range

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