We studied the luminescence of bulk Zn1-x Cd x Se solid solutions, epitaxial ZnSe films and ΖnSe1-xSx/ΖnSe1-ySy superlattices at Τ = 2-80 K.The analysis of the bands of exciton radiative annihilation with simultaneous emission of 1 or 2 LO phonons shows that the excitons in the studied samples can be considered as free particles with thermalized distribution of kinetic energies. In ZnSe 1 -x S x /ZnSe1-y S y superlattices a three-dimensional character of exciton motion was established. The periodic potential of su -p e r l a t t i c e p e r t u r b s t h e e x c i t o n w a v e v e c t o r a n d i n d u c e s a d d i t i o n a l e l a s t i c scattering of excitons.PACS numbers: 78.20.Ci
SamplesBulk samples of cubic Zn 1 -x Cdx Se were grown from vapour phase and had cadmium content x = 0.05-0.07 as determined from the position of exciton reflection hines. High quality epitaxial ZnSe films with thickness up to 10 μm were grown by photoassisted metal-organic chemical vapour deposition (MOCVD) on (100) GaAs substrates using (Et)2Zn, (Met)2Se and (Et)2S as sources.ΖnSe1-x S/ΖnSe1-y Sy superlattices were grown on GaAs at T = 4500C by photomodulated MOCVD [1]. It was found that the photostimulation with blue light during the growth of ZnSeS influences the solution composition and hence the band gap of the growing material. By periodic modulation of the photostimulation intensity the superlattices (SL's) consisting of alternating ZnSeS 1ayers of different composition were grown. Formation of superlattices by this method was confirmed by X-ray analysis. The typical parameters of superlattices were: SL period -120 nm; number of periods -50-300; total thickness -2-7 μm, average sulphur content -2-8%, band-gap modulation -10-20 meV.(959)