Exciton diamagnetic shifts and valley Zeeman effects in monolayer WS2 and MoS2 to 65 Tesla

Stier, Andreas V.; McCreary, Kathleen M.; Jonker, B. T.; Kono, Junichiro; Crooker, S. A.

doi:10.1038/ncomms10643

Cited by 301 publications

(365 citation statements)

References 56 publications

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“…We are able to determine the longitudinal exciton Landé g factor in magnetic fields below 10 T in a commercial magnetocryostat. Because of the large linewidth of uncapped samples, this measurement has so far only been possible in pulsed field facilities generating several tens of tesla [33,34]. We find for the neutral exciton g X ¼ −1.7 AE 0.1, different from earlier reports on unprotected samples that suggested g X ¼ −4.…”

Section: Introductioncontrasting

confidence: 99%

“…V). The low-temperature linewidth in our capped samples is more than 1 order of magnitude smaller than the one observed for the usual broad peak reported in most studies for MoS 2 [9,14,16,[29][30][31][32][33][34]. This transition usually attributed to the neutral exciton is possibly merged with a broad charged exciton and/or defect contribution, as discussed recently [40].…”

Section: Neutral Exciton Transition In Pl and Reflectivitycontrasting

confidence: 41%

“…3(a) and 4(d). This is a major improvement on the usually reported emission linewidth of ≈50 meV at low temperature [9,14,16,[29][30][31][32][33][34]. The high-quality van der Waals heterostructures [35] we investigate here allow us to access new information on their optical and spin-valley properties.…”

Section: Introductionmentioning

confidence: 85%

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Excitonic Linewidth Approaching the Homogeneous Limit in MoS2 -Based van der Waals Heterostructures

et al. 2017

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The strong light-matter interaction and the valley selective optical selection rules make monolayer (ML) MoS 2 an exciting 2D material for fundamental physics and optoelectronics applications. But, so far, optical transition linewidths even at low temperature are typically as large as a few tens of meV and contain homogeneous and inhomogeneous contributions. This prevented in-depth studies, in contrast to the bettercharacterized ML materials MoSe 2 and WSe 2 . In this work, we show that encapsulation of ML MoS 2 in hexagonal boron nitride can efficiently suppress the inhomogeneous contribution to the exciton linewidth, as we measure in photoluminescence and reflectivity a FWHM down to 2 meV at T ¼ 4 K. Narrow optical transition linewidths are also observed in encapsulated WS 2 , WSe 2 , and MoSe 2 MLs. This indicates that surface protection and substrate flatness are key ingredients for obtaining stable, high-quality samples. Among the new possibilities offered by the well-defined optical transitions, we measure the homogeneous broadening induced by the interaction with phonons in temperature-dependent experiments. We uncover new information on spin and valley physics and present the rotation of valley coherence in applied magnetic fields perpendicular to the ML.

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Section: Introductioncontrasting

confidence: 99%

Section: Neutral Exciton Transition In Pl and Reflectivitycontrasting

confidence: 41%

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Excitonic Linewidth Approaching the Homogeneous Limit in MoS2 -Based van der Waals Heterostructures

et al. 2017

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“…Lett. 108, 142101 (2016) numerous recent studies 23,[45][46][47] and demands future work. For discrete emitters in ML WSe 2 investigated in Refs.…”

Section: -3mentioning

confidence: 99%

Discrete quantum dot like emitters in monolayer MoSe2: Spatial mapping, magneto-optics, and charge tuning

Branny

Wang

Kumar

et al. 2016

Applied Physics Letters

118

110

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Transition metal dichalcogenide monolayers such as MoSe2,MoS2 and WSe2 are direct bandgap semiconductors with original optoelectronic and spin-valley properties. Here we report spectrally sharp, spatially localized emission in monolayer MoSe2. We find this quantum dot like emission in samples exfoliated onto gold substrates and also suspended flakes. Spatial mapping shows a correlation between the location of emitters and the existence of wrinkles (strained regions) in the flake. We tune the emission properties in magnetic and electric fields applied perpendicular to the monolayer plane. We extract an exciton g-factor of the discrete emitters close to -4, as for 2D excitons in this material. In a charge tunable sample we record discrete jumps on the meV scale as charges are added to the emitter when changing the applied voltage.

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“…[19]. The intent of this paper is therefore to present a considerably more detailed description of the experimental setup and of the challenges faced when working with monolayer materials in pulsed magnetic fields.…”

Section: Introductionmentioning

confidence: 99%

Magnetoreflection spectroscopy of monolayer transition-metal dichalcogenide semiconductors in pulsed magnetic fields

Stier

McCreary

Jonker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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We describe recent experimental efforts to perform polarization-resolved optical spectroscopy of monolayer transition-metal dichalcogenide semiconductors in very large pulsed magnetic fields to 65 tesla. The experimental setup and technical challenges are discussed in detail, and temperaturedependent magneto-reflection spectra from atomically thin tungsten disulphide (WS2) are presented. The data clearly reveal not only the valley Zeeman effect in these 2D semiconductors, but also the small quadratic exciton diamagnetic shift from which the very small exciton size can be directly inferred. Finally, we present model calculations that demonstrate how the measured diamagnetic shifts can be used to constrain estimates of the exciton binding energy in this new family of monolayer semiconductors.

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Exciton diamagnetic shifts and valley Zeeman effects in monolayer WS2 and MoS2 to 65 Tesla

Cited by 301 publications

References 56 publications

Excitonic Linewidth Approaching the Homogeneous Limit in MoS2 -Based van der Waals Heterostructures

Excitonic Linewidth Approaching the Homogeneous Limit in MoS2 -Based van der Waals Heterostructures

Discrete quantum dot like emitters in monolayer MoSe2: Spatial mapping, magneto-optics, and charge tuning

Magnetoreflection spectroscopy of monolayer transition-metal dichalcogenide semiconductors in pulsed magnetic fields

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