Excimer Laser Crystallized (Pb,La)(Zr,Ti)O₃ Thin Films

Abstract

A KrF pulsed excimer laser (248 nm) was utilized to crystallize sputtered La-modified Pb(Zr,Ti)O 3 (3:30:70) (PLZT) films on LaNiO 3 -coated silicon substrates. The film surface was irradiated with defocused laser pulses in an oxygen ambient at various substrate temperatures. Polycrystalline, phase pure perovskite PLZT thin films were produced for substrate temperatures of 2501C and higher. The dielectric constant and loss tangent values of laser-assisted crystallized (10 min exposure at 10 Hz using a substrate temperature of 4001C) PLZT thin films at 10 kHz were 406 and 0.027; in comparison, rapid thermal annealed films (annealed at 7001C for 1 min) showed values of 400 and 0.021, respectively. Laser crystallized films exhibited a remanent polarization value of 14 lC/cm 2 with a coercive field |(E 1c 1E Àc )|/2 of 95 kV/cm.

Laser Irradiation of Metal Oxide Films and Nanostructures: Applications and Advances

“…In this context, laser irradiation appears as a potential alternative because laser irradiation exhibits a significantly fast and localized thermal effect without any interference with the underlying substrates or surrounding circuitry. Many studies have been conducted on the laser irradiation of dielectric, ferroelectric, and piezoelectric ceramic films for different purposes . Representative findings of some of these studies on laser irradiated electroceramic films are discussed below.…”

Strategy for Low-Temperature Crystallization of Titanium-Rich PZT Thin Films by Chemical Solution Deposition

“…UV activation has been implemented to promote decomposition of functional groups in the as-deposited films [6]. Beside introducing previously mentioned nucleation layers or seeds [7], laser activation has been reported to decrease the crystallization temperature of thin films [8,9].…”

Microstructure Evolution of In Situ Pulsed‐Laser Crystallized Pb(Zr0.52Ti0.48)O3 Thin Films

“…On the other hand, direct integration of the piezoelectric thin film with a microchip would improve response times in sensors, potentially coupled with low‐cost manufacturing . Pulsed‐laser treatment is one way to selectively heat the film to achieve the high temperatures required for perovskite phase crystallization, while causing minimal heating of the underlying substrate …”

“…3 Pulsed-laser treatment is one way to selectively heat the film to achieve the high temperatures required for perovskite phase crystallization, while causing minimal heating of the underlying substrate. [4][5][6][7][8][9][10] Moreover, in situ heat treatment of oxide thin films during growth can also benefit from reduced crystallization temperatures compared to a postdeposition thermal processing. 11,12 It has been shown that crystallization of ferroelectric thin films can be achieved by simultaneous laser annealing during growth at substrate temperatures of ≤400°C.…”