Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on an undulant Si substrate

Kato, Masashi; Yoshida, Akira; Ichimura, M.; Nagasawa, Hiroyuki

doi:10.1002/pssa.201329015

Cited by 2 publications

(1 citation statement)

References 30 publications

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“…These apparatuses are the same as those used in our previous µ-PCD measurements. 11,15,[27][28][29][30] We observed the reflected microwave signal immediately after excitation (a peak µ-PCD signal) as a function of the injected photon density, which was controlled by rotating a λ=2 plate positioned before a Glan prism. For the excitation of a small area within the sample, we inserted a ceramic pinhole with various sizes near the excitation side of the sample.…”

Section: Experimental Methodsmentioning

confidence: 99%

Microwave reflectivity from 4H-SiC under a high-injection condition: impacts of electron–hole scattering

Kato

Mori

Ichimura

2015

Jpn. J. Appl. Phys.

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The carrier lifetime and mobility under a high-injection condition are key parameters for the design of bipolar devices. Microwave photoconductivity decay (µ-PCD) is a common method to evaluate the carrier lifetime in silicon carbide (SiC). For accurate evaluation of the carrier lifetime by µ-PCD measurements, we need the proportionality of the microwave reflectivity to the excess carrier concentration. In this study, we observed the loss of the proportionality of µ-PCD signals to the excess carrier concentration under a high-injection condition and we discussed two origins of the loss of proportionality: nonlinear reflection due to a large change in conductivity and mobility reduction by electron-hole scattering. Then we suggested a method to suppress the large change in conductivity and revealed the impacts of electron-hole scattering.

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Section: Experimental Methodsmentioning

confidence: 99%

Microwave reflectivity from 4H-SiC under a high-injection condition: impacts of electron–hole scattering

Kato

Mori

Ichimura

2015

Jpn. J. Appl. Phys.

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Lifetime of photoexcited carriers in space-controlled Si nanopillar/SiGe composite films investigated by a laser heterodyne photothermal displacement method

Harada

Ohori

Endo

et al. 2023

Journal of Applied Physics

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Thermal management has become more critical as semiconductor devices are miniaturized. In metal–oxide–semiconductor field-effect transistors, the problem is the reduction in electron mobility in the channel layer owing to the temperature rise caused by heat generation near the channel-drain region. Focusing on the mean free paths of phonons and electrons in Si, nanostructures of a few 10 nm may only hinder heat propagation without affecting electron transportation. Therefore, inserting nanostructures into the channel layer may prevent a temperature rise and maintain a higher electron mobility. To discuss the relationship between the spacing between the nanopillars (NPs) and the heat generation and carrier behavior of the Si-NP/SiGe composite film, samples with NP spacings of 13, 27, or 47 nm were prepared. We previously confirmed that the thermal conductivity of the Si-NP/SiGe composite film decreased as NP spacing narrowed. The NPs scattered phonon propagation and suppressed heat propagation. However, carrier transport properties such as electrical conductivity, carrier mobility, and carrier lifetime have never been discussed. The laser heterodyne photothermal displacement method was used to examine the effect of nanostructures on carrier mobility and carrier lifetime of Si-NP/SiGe composite films. We observed that the carrier lifetime became longer when the NP spacing was comparable to the electron mean-free path of approximately 27 nm.

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Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on an undulant Si substrate

Cited by 2 publications

References 30 publications

Microwave reflectivity from 4H-SiC under a high-injection condition: impacts of electron–hole scattering

Microwave reflectivity from 4H-SiC under a high-injection condition: impacts of electron–hole scattering

Lifetime of photoexcited carriers in space-controlled Si nanopillar/SiGe composite films investigated by a laser heterodyne photothermal displacement method

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