Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling

Fleetwood, D.M.

doi:10.1109/tns.2017.2786140

Cited by 151 publications

(64 citation statements)

References 157 publications

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“…Typical ∆V/V values for the conventional technologies arein the range 0.005-0.99 6-14 , which are substantially larger than those observed for the quasi-2D 1T-TaS2 CDW devices. Even for devices showing high radiation tolerance, complex and expensive testing protocols are required for device qualification, which is not the case for these CDW devices 10,16,36,37 .In conclusion, we demonstrated that quasi-2D CDW devices have remarkable immunity to irradiation by high-energy protons. The I-V and LFN analysis show no significant changes up to at least the high fluence of 10 14 H + cm -2 , indicating the absence of both totalionizing-dose and displacement-damage effects.…”

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confidence: 83%

“…in the range 0.005-0.99 6-14 , which are substantially larger than those observed for the quasi-2D 1T-TaS2 CDW devices. Even for devices showing high radiation tolerance, complex and expensive testing protocols are required for device qualification, which is not the case for these CDW devices 10,16,36,37 .…”

Section: P a G Ementioning

confidence: 99%

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“…Protons can cause ionizing damage and atomic displacements, resulting in device degradation and malfunction [5][6][7][8][9][10] . Shielding of electronics increases the weight and cost of the systems but does not eliminate destructive single events produced by energetic protons 8,10 . Modern electronics based on semiconductors -even those specially designed for radiation hardness -remain highly susceptible to proton damage.…”

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confidence: 99%

“…The penetrating energetic radiation of deep space produces negative impacts on not only biological entities but also the electronic systems of space vehicles. Electronics capable of operating in highradiation environments are also needed for monitoring nuclear materials, medical diagnostics, radiation treatments, nuclear reactors and particle accelerators 5-12 .Shielding of electronic systems in space is limited to lower-energy electrons and protons.High-energy proton irradiation causes ionizing damage by generating excess charges at the interface regions in the complementary metal-oxide-semiconductor (CMOS) transistors and other typical microelectronic devices and integrated circuits [8][9][10][11][12][13][14] . This type of damage results in the changes in the threshold voltages and source-drain currents, potentially leading to device or system failure.…”

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Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices

et al. 2019

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Proton radiation damage is an important failure mechanism for electronic devices in near-Earth orbits, deep space and high energy physics facilities [1][2][3][4] . Protons can cause ionizing damage and atomic displacements, resulting in device degradation and malfunction [5][6][7][8][9][10] . Shielding of electronics increases the weight and cost of the systems but does not eliminate destructive single events produced by energetic protons 8,10 . Modern electronics based on semiconductors -even those specially designed for radiation hardness -remain highly susceptible to proton damage. Here we demonstrate that room temperature (RT) charge-density-wave (CDW) devices with quasi-two-dimensional (2D) 1T-TaS2 channels show remarkable immunity to bombardment with 1.8 MeV protons to a fluence of at least 10 14 H + cm -2 . Current-2 | P a g e voltage I-V characteristics of these 2D CDW devices do not change as a result of proton irradiation, in striking contrast to most conventional semiconductor devices or other 2D devices. Only negligible changes are found in the low-frequency noise spectra. The radiation immunity of these "all-metallic" CDW devices can be attributed to their two-terminal design, quasi-2D nature of the active channel, and high concentration of charge carriers in the utilized CDW phases. Such devices, capable of operating over a wide temperature range, can constitute a crucial segment of future electronics for space, particle accelerator and other radiation environments. | P a g eThe future of human and unmanned space exploration depends crucially on the development of new electronic technologies that are immune to space radiation, which consists primarily of protons, electrons, and cosmic rays 1-4 . The penetrating energetic radiation of deep space produces negative impacts on not only biological entities but also the electronic systems of space vehicles. Electronics capable of operating in highradiation environments are also needed for monitoring nuclear materials, medical diagnostics, radiation treatments, nuclear reactors and particle accelerators 5-12 .Shielding of electronic systems in space is limited to lower-energy electrons and protons.High-energy proton irradiation causes ionizing damage by generating excess charges at the interface regions in the complementary metal-oxide-semiconductor (CMOS) transistors and other typical microelectronic devices and integrated circuits [8][9][10][11][12][13][14] . This type of damage results in the changes in the threshold voltages and source-drain currents, potentially leading to device or system failure. Protons also can induce displacement, which typically leads to the formation of point defects in semiconductors. These are electronic trapping states that often reveal themselves by increases in low-frequency noise (LFN) 15,16 Noise increases beyond system tolerance limits is therefore an additional challenge to electronics in high-radiation environments. Shielding, the use of conventional radiation-hardened technologies and backup devices, increases system...

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confidence: 99%

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confidence: 99%

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Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices

et al. 2019

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Sub‐Picosecond Nanodiodes for Low‐Power Ultrafast Electronics

Li¹,

Zhang²,

He³

et al. 2021

Advanced Materials

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The tradeoff between ultrahigh speed and low power is a dominant challenge in continuously improving modern electronics. Fundamental electronic devices with ultrafast response are highly desired in low‐power electronics. However, conventional semiconductor electronic devices now near the speed limit from the physical roadblocks including short‐channel effect, restricted carrier velocity, and heat death. Currently emerging electronic devices also face formidable difficulties to achieve high‐speed performance at low operating voltage without heat disturbance. Here, a novel fabricated coplanar tip‐to‐edge semiconductor‐free nanostructure with asymmetric sub‐10 nm air channel is reported, stimulating electric‐field accelerated scattering‐free transport of electrons and resulting in ultrafast response of record sub‐picoseconds at a low turn‐on voltage around 0.7 V. Simulation results show a typical electrical response down to 64 fs, which is ≈103 times faster than that of conventional semiconductor electronic devices. The coplanar asymmetric nanostructure allows a high rectifying ratio up to 106 which is superior to that of the most promising 2D semiconducting nanodiodes. In addition, heat death is overcome due to the inherent advantages from the novel nanostructure and underlying working mechanism. The intriguing nanodiodes will attract broadly interests in electronics due to their potential as rudimentary building blocks in ultrafast electronic integrated circuits.

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Highly Temperature‐Stable Carbon Nanotube Transistors and Gigahertz Integrated Circuits for Cryogenic Electronics

Xie

Zhong

Fan

et al. 2021

Adv Elect Materials

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environment such as full of high energy rays and extreme temperature environment. [2][3][4][5][6][7] For example, radiation harden transistors are necessary for ICs applied in the space and nuclear energy industries. [5][6][7] Recently, cryogenic electronics have received more and more attentions along with the rising of quantum computing and space exploration, in which low-temperature stable operation is even more important than performance of the integrated circuits. [8] Specifically, readout and control circuitry should be monolithic integrated with the quantum processor, which means that they are supposed to operate at low temperature. [9] Therefore, ICs with excellent temperature stability are always demanded to reduce the system noise and ensure accuracy in the control and readout of the qubits. [10] However, it is a big challenge to realize temperature stable ICs since the channel conductance is extremely sensitive to temperature in the semiconductor-based transistors owing to strong temperature dependent carrier scattering and thermal excitation. [11] Carbon nanotube has been considered as a promising channel material to construct high-performance CMOS FETs for the future electronics because of its ultra-thin body, extremely high carrier mobility and symmetric band structure. [12][13][14][15] The development of CNT electronics is strongly dependent on material, and high semiconducting purity and high density aligned CNT arrays with wafer-scale uniformity are the ideal materials for high-performance CNT FETs and ICs. [13,14] However, the most mature CNT material for electronics is solution-derived randomly oriented CNT film which exhibits high semiconducting purity up to 99.9999% and uniformity across large area. [17] Large scale or high-performance ICs have been demonstrated based on randomly oriented CNT film. [18][19][20] However, FETs and ICs built on network CNT film cannot reach the predicted performance due to the random orientation distribution of CNTs, and then are not possible to compete with Si CMOS ICs on performance. [21] An effective way to make network CNT film-based electronics available is to explore the special performances potentially applied in special fields, for example, radiation harden, [22] flexible electronics, [23] cryogenic electronics and so on. Compared with silicon-based FETs, the CNT FETs are more suitable to operate at extreme temperature owing to the Cryogenic electronics are attracting more and more attentions owing to the rising of space exploration and quantum computing, in which lowtemperature stable operation is even more concerned than performance of the integrated circuits (ICs). As a promising semiconducting material, carbon nanotube (CNT) has been extensively explored on its low-temperature transport characteristics, but the cryogenic electronics application of CNT transistors and ICs has seldom been demonstrated. In this work, the lowtemperature operation of field-effect transistors (FETs) and ICs built on solution-derived high semiconducting purity randomly orie...

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Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling

Cited by 151 publications

References 157 publications

Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices

Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices

Sub‐Picosecond Nanodiodes for Low‐Power Ultrafast Electronics

Highly Temperature‐Stable Carbon Nanotube Transistors and Gigahertz Integrated Circuits for Cryogenic Electronics

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