Evaluation of Strained-Silicon by Electron Backscattering Pattern Measurement: Comparison Study with UV-Raman Measurement and Edge Force Model Calculation

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We provide the parameters of Stillinger-Weber potentials for GeSiSn ternary mixed systems. These parameters can be used in molecular dynamics (MD) simulations to reproduce phonon properties and thermal conductivities. The phonon dispersion relation is derived from the dynamical structure factor, which is calculated by the space-time Fourier transform of atomic trajectories in an MD simulation. The phonon properties and thermal conductivities of GeSiSn ternary crystals calculated using these parameters mostly reproduced both the findings of previous experiments and earlier calculations made using MD simulations. The atomic composition dependence of these properties in GeSiSn ternary crystals obtained by previous studies (both experimental and theoretical) and the calculated data were almost exactly reproduced by our proposed parameters. Moreover, the results of the MD simulation agree with the previous calculations made using a time-independent phonon Boltzmann transport equation with complicated scattering mechanisms. These scattering mechanisms are very important in complicated nanostructures, as they allow the heat-transfer properties to be more accurately calculated by MD simulations. This work enables us to predict the phonon-and heat-related properties of bulk group IV alloys, especially ternary alloys.

Section: Bulkmentioning

confidence: 99%

Development of interatomic potential of Ge₍₁₋_x₋_y₎Si_xSn_yternary alloy semiconductors for classical lattice dynamics simulation

Tomita

Ogasawara

Terada

et al. 2018

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“…There are several strain evaluation techniques including convergent-beam electron diffraction (CBED), 8,9) X-ray diffraction (XRD), 10,11) and electron backscattering pattern (EBSP). 12) In particular, it has been reported that Raman spectroscopy is a powerful strain evaluation technique, because it has advantages such as a nondestructive measurement and a high spatial resolution. [13][14][15][16][17][18][19][20][21] To evaluate strain in Si 1−x Ge x by Raman spectroscopy quantitively, phonon deformation potentials (PDPs) are necessary for a conversion from a Raman wavenumber shift to a stress value.…”

Section: Introductionmentioning

confidence: 99%

Determination of phonon deformation potentials and strain-shift coefficients in Ge-rich Si₁₋ _x Ge _x using bulk Ge-rich Si₁₋ _x Ge _x crystals and oil-immersion Raman spectroscopy

Yokogawa

Takeuchi

Murakami

et al. 2018

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The strain-free Raman shift of the Ge–Ge mode, , of Ge-rich Si1−xGex (x: Ge fraction) was determined accurately from the bulk Ge-rich Si1−xGex samples fabricated by the Czochralski (Cz) method. Using the obtained , the phonon deformation potentials (PDPs), p and q, and the strain-shift coefficient bLO of isotropic biaxial strained Ge-rich Si1−xGex thin films were extracted by oil-immersion Raman spectroscopy using Raman peak shifts of longitudinal and transverse optical (LO and TO) phonon modes. As a result, it was confirmed that these parameters are almost constant with small variations and that the strain-shift coefficient bLO is in good agreement with ab initio calculations. The parameters determined in this work are essential to realize accurate strain measurements using Raman spectroscopy for Ge-rich Si1−xGex devices.

“…There are several evaluation techniques for strain induced in semiconductor materials, such as, X-ray diffraction (XRD), electron back-scattering diffraction, Raman spectroscopy, transmission electron microscopy (TEM), and hard X-ray photoemission spectroscopy. [12][13][14][15][16][17][18][19] Among these techniques, Raman spectroscopy is one of the most effective techniques for the strain evaluation of crystals as nondestructive and contactless measurements, and it has a relatively high spatial resolution. [20][21][22] It is essential to prove the uniaxial stress states in the compressively strained SiGe layers fabricated by selective ion implantation because the large uniaxial stress induced in SiGe efficiently leads to the improvement of the drive current of devices.…”

Section: Introductionmentioning

confidence: 99%

Pattern-dependent anisotropic stress evaluation in SiGe epitaxially grown on a Si substrate with selective Ar⁺ion implantation using oil-immersion Raman spectroscopy

Yamamoto

Kosemura

Takeuchi

et al. 2017

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Biaxial stress states in SiGe stripes on Si substrates fabricated by a novel selective Ar+ ion implantation technique were evaluated by oil-immersion Raman spectroscopy. The oil-immersion technique is appropriate for the measurement of strain induced in nanostructure devices, because it has a higher spatial resolution than conventional Raman spectroscopy and can evaluate anisotropic stress states owing to the excitation of multiple optical phonon modes. Results indicate that quasi-uniaxial stress states exist in SiGe layers in unimplanted Si areas, which depends on the stripe-width ratio of implanted and unimplanted areas, and that quasi-uniaxial stress states are successfully induced in SiGe by the present technique, which can be considered as the channel materials of high-performance transistors.