Evaluation of Electron Trapping Speed of AlGaN/GaN HEMT With Real-Time Electroluminescence and Pulsed $I{-}V$ Measurements

Breakdown degradation of AlGaN/GaN HEMTs with multi-finger gate patterns

“…However, it was confirmed that breakdown voltage decreased with increased device gate width (W g ). In this paper, we studied the impact on V br characteristic of device electrode pattern and corresponding EL emission, due to electric field concentration [3,4].…”

Identification of local gate leakage with electroluminescence using AlGaN/GaN HEMTs

“…Despite the superior performance of high power applications using GaN-based HEMTs, the large gate leakage current of HEMTs is still under discussion [2][3][4][5][6][7][8]. One mechanism is current flow through dislocations and defects in the epitaxial layer [2,3], which may be supported by spot-shape emission in electroluminescence (EL) [5][6][7][8][9][10][11][12]. So far, the spot-shape EL has been observed only at the gate edge in the case of front-side observation [6-8, 10, 11].…”

“…For EL measurements, an emission microscope PHEMOS-1000 by Hamamatsu Photonics K.K. was used, in which a silicon intensified charge-coupled device (SI-CCD) camera is installed [11,12]. The spectral response of the SI-CCD camera extends from 300 to 1100 nm, which covers the expected luminescence spectrum from AlGaN/GaN HEMTs (500-950 nm).…”

Bias-Dependence of Electroluminescence in AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrate

“…Electroluminescence (EL) measurement is a powerful method for analysis of electric field distribution in AlGaN/GaN HEMTs. [15][16][17][18][19][20][21][22][23][24][25] The high electric field region in HEMTs can be identified by EL location. In the case of HEMTs with severe current collapse, EL was observed at the drain edge.…”

“…Furthermore, some literatures mentioned when HEMTs was under continuous biasing, EL shifted from the gate edge toward the drain electrode, indicating a transition of the high electric field region. [17][18][19] In addition, EL color was used to explore a distribution of an electron energy. HEMTs with high energy hot electrons exhibited a high-intensity whitish EL, whereas HEMTs with relatively low energy hot electrons exhibited a weak reddish EL.…”