Etude du système Cr/Si(111) : croissance épitaxique de films de CrSi2

CrSi2 layers grown by solid phase epitaxy on a nominal (111) Si surface exhibit in the same proportion two different orientation relationships, named A and B. When CrSi2 is deposited on a 8° vicinal (111) Si surface, B-type orientation is favoured with respect to the A type. This result can be explained by the fact that both the step width introduced by the miscut and the planar coincidence between {1100}Crsi2 and {111}Si are nearly equal to 23Å. Edge type misfit dislocations are observed at the interface with the same spacing. Their Burgers vector component along [111] is almost compensated by the atomic steps along the <110> directions. The role of the steps is discussed in term of elastic energy. Steps introduce misfit dislocations which make possible coherent growth of the B type orientation.

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Role of the Surface Steps on the Growth of CrSi₂ on {111} Silicon.

Rocher

Oustry

David

et al. 1995

MRS Proc.

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Etude du système Cr/Si(111) : croissance épitaxique de films de CrSi2

Cited by 1 publication

References 23 publications

Role of the Surface Steps on the Growth of CrSi₂ on {111} Silicon.

Role of the Surface Steps on the Growth of CrSi₂ on {111} Silicon.

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Etude du système Cr/Si(111) : croissance épitaxique de films de CrSi2

Cited by 1 publication

References 23 publications

Role of the Surface Steps on the Growth of CrSi2 on {111} Silicon.

Role of the Surface Steps on the Growth of CrSi2 on {111} Silicon.

Contact Info

Product

Resources

About

Role of the Surface Steps on the Growth of CrSi₂ on {111} Silicon.

Role of the Surface Steps on the Growth of CrSi₂ on {111} Silicon.