Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices

Zimmerman, Neil M.; Hourdakis, E.; Ono, Yuki; Fujiwara, Akira; Takahashi, Yasuo

doi:10.1063/1.1791758

Cited by 30 publications

(18 citation statements)

References 29 publications

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“…Universal, analytic results are possible only in special limits, of which a particularly useful one is the statistics of charge capture [52,108,111,124,[145][146][147] (see also an analytic solution for time-limited emission with constant rates in [74,96,148,149]). To model charge capture in a QD by a closing tunable barrier, we follow [147] and consider a close-enough-to-equilibrium initial state of the dot at t = t 0 , when it is well connected to the source lead.…”

Section: Theory Backgroundmentioning

confidence: 99%

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Non-adiabatic quantized charge pumping with tunable-barrier quantum dots: a review of current progress

2015

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Precise manipulation of individual charge carriers in nanoelectronic circuits underpins practical applications of their most basic quantum property -the universality and invariance of the elementary charge. A charge pump generates a net current from periodic external modulation of parameters controlling a nanostructure connected to source and drain leads; in the regime of quantized pumping the current varies in steps of qef as function of control parameters, where qe is the electron charge and f is the frequency of modulation. In recent years, robust and accurate quantized charge pumps have been developed based on semiconductor quantum dots with tunable tunnel barriers. These devices allow modulation of charge exchange rates between the dot and the leads over many orders of magnitude and enable trapping of a precise number of electrons far away from equilibrium with the leads. The corresponding non-adiabatic pumping protocols focus on understanding of separate parts of the pumping cycle associated with charge loading, capture and release. In this report we review realizations, models and metrology applications of quantized charge pumps based on tunable-barrier quantum dots.

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Section: Theory Backgroundmentioning

confidence: 99%

“…W (5) and (6) in [123]). For tunnelling, a single-electron WKB approximation for one-dimensional rectangular barrier leads to an estimate of ∆ b as [124,125] …”

Section: Theory Backgroundmentioning

confidence: 99%

Non-adiabatic quantized charge pumping with tunable-barrier quantum dots: a review of current progress

2015

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“…The "write" operation is accomplished through the SE turnstile, so its operating frequency has a significant effect on the write delay. The transfer accuracy deteriorates if the falling time t fall of the CLK signal is too small [20]; hence, the write delay of the proposed SRAM cell is higher than the read delay. Furthermore, the mechanism of the "write" operation in the proposed memory cell is different from a conventional (CMOS-based) SRAM.…”

Section: A Circuit Performancementioning

confidence: 98%

“…So, the increased voltage levels only appear at this time. Finally, for both simulated cases and by taking into account the transfer error rate of the SE turnstile [20], the frequency of operation for the SRAM cell is given by 166 MHz [20].…”

Section: Simulation Of a Memory Cellmentioning

confidence: 99%

Design and Evaluation of a Hybrid Memory Cell by Single-Electron Transfer

Wei

Han

Lombardi

2013

IEEE Trans. Nanotechnology

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This paper presents the characterization and design of a static random access memory (SRAM) cell at nanoscale ranges. The proposed SRAM cell incorporates a single-electron (SE) turnstile and an SE transistor/MOS circuit in its operation, hence the hybrid nature. Differently from previous cells, the hybrid circuit is utilized to sense (measure) on a voltage basis the presence of at least an electron as stored in memory, while the turnstile enables the SE transfer in and out of the storage node. The two memory operations (read and write) are facilitated by utilizing these hybrid circuits; moreover, the proposed SRAM cell shows compatibility with MOSFET technology. HSPICE simulation shows that the proposed SRAM cell operates correctly at 45 and 32 nm with good performance in terms of propagation delay, signal integrity, area, stability, and power consumption. The extension of the aforementioned hybrid design to a ternary content addressable memory cell is also presented.Index Terms-Memory cell design, single-electron transistor (SET), static random access memory (SRAM), ternary content addressable memory (TCAM).

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“…Leakage processes in single-electron devices containing MTJs were extensively studied in recent publications [14][15][16][17][18][19][20][21] . Experimental and theoretical investigations 20,22 suggest that in metal single-electron devices with MTJs at moderately high temperatures (≥150 mK) or in the presence of a bias across the junctions (V≥50 µV) the leakage errors are dominated by thermal activation over the Coulomb barrier 20,[23][24][25] .…”

Section: Introductionmentioning

confidence: 99%

Using granular film to suppress charge leakage in a single-electron latch

et al. 2008

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Abstract-A single-electron latch is a device that can be used as a building block for Quantum-dot Cellular Automata (QCA) circuits. It consists of three nanoscale metal "dots" connected in series by tunnel junctions; charging of the dots is controlled by three electrostatic gates. One very important feature of a single-electron latch is its ability to store ("latch") information represented by the location of a single electron within the three dots. To obtain latching, the undesired leakage of charge during the retention time must be suppressed. Previously, to achieve this goal, multiple tunnel junctions were used to connect the three dots. However, this method of charge leakage suppression requires an additional compensation of the background charges affecting each parasitic dot in the array of junctions. We report a single-electron latch where a granular metal film is used to fabricate the middle dot in the latch which concurrently acts as a charge leakage suppressor. This latch has no parasitic dots, therefore the background charge compensation procedure is greatly simplified. We discuss the origins of charge leakage suppression and possible applications of granular metal dots for various single-electron circuits.

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Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices

Cited by 30 publications

References 29 publications

Non-adiabatic quantized charge pumping with tunable-barrier quantum dots: a review of current progress

Non-adiabatic quantized charge pumping with tunable-barrier quantum dots: a review of current progress

Design and Evaluation of a Hybrid Memory Cell by Single-Electron Transfer

Using granular film to suppress charge leakage in a single-electron latch

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