Erratum: Zero-field spin splitting and spin lifetime in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>n</mml:mi></mml:mrow></mml:math>-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>InSb</mml:mi><mml:mo>∕</mml:mo><mml:msub><mml:mi>In</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Al</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi>Sb</mml:mi></mml:mrow></mml

Gilbertson, A. M.; Fearn, M.; Jefferson, J. H.; Murdin, B. N.; Buckle, Philip Derek; Cohen, L. F.

doi:10.1103/physrevb.78.079901

Cited by 16 publications

(38 citation statements)

References 2 publications

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“…The smaller value of α = 0.1 eVÅ is closer to the values obtained by experiment and theory. 16,17 The simulated curves T f oc reproduce well the salient features of the experimental data, namely, the focusing peak and the non-monotonic background resistance. These focusing peaks have a FWHM of ∼33 mT, whereas the splitting of the peaks are only 1, 5 and 13 mT, respectively.…”

Section: Modelsupporting

confidence: 55%

“…Eq. 4 includes both Zeeman and Rashba terms but excludes Dresselhaus terms for simplicity (as is appropriate for a highly asymmetric InSb QW 16,17 ). The spin S is evolved using the cross product,…”

Section: Modelmentioning

confidence: 99%

“…In the InSb devices, the respective energy splittings of 25 and 68 meV are an order of magnitude greater than would be expected. 16,17 In particular the 68 meV splitting is approximately one third of the energy gap of InSb and is therefore unrealistic. Optical orientation of excited carriers allows the possibility to interogate the separate contributions of the spin populations in a ballistic device.…”

Section: Introductionmentioning

confidence: 99%

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Transverse focusing of spin-polarized photocurrents

Gilbertson

Litvinenko

et al. 2012

Phys. Rev. B

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We measure transverse magnetically focused photocurrent signals in an InSb/InAlSb quantum well device. Using optical spin orientation by modulated circularly polarized light an electron spin dependent signal is observed due to the spin-orbit interaction. Simulations of the focusing signal are performed using a classical billiard ball model which includes both spin precession and a spin dependent electron energy. The simulated data suggests that a signal dependent on the helicity of the incident light is expected for a Rashba parameter α > 0.1 eVÅ and that a splitting of the focusing signal is not expected to be observed in linear polarised photocurrent and purely electrical measurements.

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Section: Modelsupporting

confidence: 55%

Section: Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Transverse focusing of spin-polarized photocurrents

Gilbertson

Litvinenko

et al. 2012

Phys. Rev. B

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“…16 In an alternative approach, Khodaparast et al 17 extrapolated a spin splitting to zero field in an asymmetric 30 nm InSb/InAlSb QW from electron-spinresonance measurements. Assuming the Rashba interaction to be dominant, ␣ R was determined to be as high as 1.3 ϫ 10 −11 eV m. This is larger than recent theoretical calculations in InSb/InAlSb QWs estimating ␣ R to be in the range of 2-7ϫ 10 −12 eV m. 18 In this work it was also demonstrated that the bulk inversion asymmetry ͑BIA͒ contribution to spin splitting can be of significant and comparable value to that of the Rashba depending on the specific details of the heterostructure. In support of this concept, Akabori et al 19 recently reported experimental results indicating that BIA was dominant in a similar narrow gap InGaSb/AlInSb QW sample.…”

Section: Introductionmentioning

confidence: 74%

Zero-field spin splitting and spin-dependent broadening in high-mobilityInSb/In1−xAlxSbasymmetric quantum well heterostruct

et al. 2009

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We present high-field magnetotransport data from a range of 30-nm-wide InSb/InAlSb quantum wells with room-temperature mobilities in excess of 6 m 2 V −1 s −1 . Samples with the narrowest Landau level broadening exhibit beating patterns in the magnetoresistance attributed to zero-field spin splitting. Rashba parameters are extracted from a range of samples and gate biases using the difference in spin populations inferred from fast Fourier transforms of the data. The influence of Landau level broadening and spin-dependent scattering rates are investigated by magnetoconductance simulations, which provide key signatures that we were able to verify by experimental observation. These results demonstrate that in addition to the large Zeeman splitting, the combination of large and spin-dependent broadening is the significant parameter in controlling the appearance of beating in these structures.

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“…12,13 Despite T 2 spin lifetimes of the order of a ps 14,15 arising from spin precessional frequencies in the THz range, these observations are possible since Fermi velocities (v F ) in these materials can be of the order of a 10 6 ms −1 . Counterintuitively, the fact that these materials exhibit long spin coherence lengths limits the ability to scale down device dimensions as the distance required to precess the electron spin can be measured in micrometres.…”

mentioning

confidence: 99%

Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth

Simmons

Jin

Sweeney

et al. 2015

Applied Physics Letters

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This paper reports on the predicted increase in the Rashba interaction due to the incorporation of Bi in GaAs/AlGaAs heterostructures. Band structure parameters obtained from the band anti-crossing theory have been used in combination with self-consistent Schrödinger-Poisson calculations and k.p models to determine the electron spin-splitting caused by structural inversion asymmetry and increased spin-orbit interaction. A near linear seven fold increase in the strength of the Rashba interaction is predicted for a 10% concentration of Bi in a GaAsBi/AlGaAs quantum well heterostructure.Over the past few years the growth of III-V bismide heterostructures has witnessed significant advances due to their potential for improved efficiency in photonic devices in the near infrared region.

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Erratum: Zero-field spin splitting and spin lifetime inn-InSb∕In1−xAlxSb

Cited by 16 publications

References 2 publications

Transverse focusing of spin-polarized photocurrents

Transverse focusing of spin-polarized photocurrents

Zero-field spin splitting and spin-dependent broadening in high-mobilityInSb/In1−xAlxSbasymmetric quantum well heterostruct

Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuth

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