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geometries of microcavities supporting "whispering gallery modes" (WGMs) the light field can be confined in extremely small volumes, reaching very high power density and very narrow spectral linewidth. As a result, the ultrahigh in-cavity intensities significantly enhance the photon-tophoton interactions, leading to ultrahigh efficiencies of nonlinear optical process even at low-power optical excitation. In addition, the small scale enables the construction of resonator-based functional devices with very high integration. With combination of these intriguing features, low-power-consumption, low-cost on-chip devices can be developed successfully. The material platforms for microresonators are crucial for the practical applications. For example, silicon dioxide (SiO 2 ) is considered as one of the most commonly used materials for microresonators, and great success has been achieved based on this easy-to-fabricate platform. [29,30] Recently, with the well-developed technology for on-chip circuits fabrication, some semiconductor materials have been harnessed as the platforms of microresonators for more electro-optic potentials, such as silicon (Si), [31,32] SiC, [33][34][35][36] ZnO, [37,38] GaN, [39,40] or AlN [41,42] . Among them, lithium niobate (LiNbO 3 or LN) has risen into the forefront of microresonator demonstrations and drawn extensive interests in photonics and electronics.Lithium niobate is a multi-functional dielectric crystal that combines a number of excellent features, [43] such as electrooptic, nonlinear optical, acousto-optic, ferroelectric, piezoelectric, photorefractive, photo-luminescent properties, and receives a broad variety of applications in telecommunication, frequency conversion, optical storage, filtering, and quantum photonics. [44][45][46][47] The single-crystal thin film of LN is an ideal platform for microresonators owing to the unique combination of various excellent properties of the bulk. The major obstacle of the LN-based microcavities was the fabrication of high-quality LN thin films because the single-crystalline features cannot be well-preserved in thin-film LN produced by chemical methods of normal deposition that is applied for semiconductors. In addition, large-scale LN-thin film wafers are desired for further processing of on-chip devices. Recently, the so-called "lithium niobate on insulator" (LNOI) technology figures the major problem out and boosts the rapid development of the thin-film LN based devices. [48][49][50][51][52][53] Most used LN films are manufactured by smart " Ion cut" technique. The typical commercialized LN thin film based on ion cut consists of a single-crystalline LN thin film with thickness of 300-900 nm, a cladding layer of SiO 2 with thickness of 2-3 µm, and the supporting material (LN or Si bulk wafer). The fabrication process of ion-cut LN thin film can be referenced in details elsewhere. [54][55][56] The refractive Leveraging the outstanding nonlinear optical properties and the ultra-high spatial confinement of light, microresonators based on lith...
geometries of microcavities supporting "whispering gallery modes" (WGMs) the light field can be confined in extremely small volumes, reaching very high power density and very narrow spectral linewidth. As a result, the ultrahigh in-cavity intensities significantly enhance the photon-tophoton interactions, leading to ultrahigh efficiencies of nonlinear optical process even at low-power optical excitation. In addition, the small scale enables the construction of resonator-based functional devices with very high integration. With combination of these intriguing features, low-power-consumption, low-cost on-chip devices can be developed successfully. The material platforms for microresonators are crucial for the practical applications. For example, silicon dioxide (SiO 2 ) is considered as one of the most commonly used materials for microresonators, and great success has been achieved based on this easy-to-fabricate platform. [29,30] Recently, with the well-developed technology for on-chip circuits fabrication, some semiconductor materials have been harnessed as the platforms of microresonators for more electro-optic potentials, such as silicon (Si), [31,32] SiC, [33][34][35][36] ZnO, [37,38] GaN, [39,40] or AlN [41,42] . Among them, lithium niobate (LiNbO 3 or LN) has risen into the forefront of microresonator demonstrations and drawn extensive interests in photonics and electronics.Lithium niobate is a multi-functional dielectric crystal that combines a number of excellent features, [43] such as electrooptic, nonlinear optical, acousto-optic, ferroelectric, piezoelectric, photorefractive, photo-luminescent properties, and receives a broad variety of applications in telecommunication, frequency conversion, optical storage, filtering, and quantum photonics. [44][45][46][47] The single-crystal thin film of LN is an ideal platform for microresonators owing to the unique combination of various excellent properties of the bulk. The major obstacle of the LN-based microcavities was the fabrication of high-quality LN thin films because the single-crystalline features cannot be well-preserved in thin-film LN produced by chemical methods of normal deposition that is applied for semiconductors. In addition, large-scale LN-thin film wafers are desired for further processing of on-chip devices. Recently, the so-called "lithium niobate on insulator" (LNOI) technology figures the major problem out and boosts the rapid development of the thin-film LN based devices. [48][49][50][51][52][53] Most used LN films are manufactured by smart " Ion cut" technique. The typical commercialized LN thin film based on ion cut consists of a single-crystalline LN thin film with thickness of 300-900 nm, a cladding layer of SiO 2 with thickness of 2-3 µm, and the supporting material (LN or Si bulk wafer). The fabrication process of ion-cut LN thin film can be referenced in details elsewhere. [54][55][56] The refractive Leveraging the outstanding nonlinear optical properties and the ultra-high spatial confinement of light, microresonators based on lith...
Rare‐earth (RE) ion doped crystalline materials have a wide spectrum of applications in lasers, amplifiers, sensors, as well as classical and quantum information processing. The incorporation of RE ions into integrated photonics holds great promise for enriching the designer's toolbox with a view to addressing key performance features not available in existing photonic integration platforms. RE‐ion‐doped thin‐film LiNbO3 (also called RE‐ion‐doped lithium‐niobate‐on‐insulator, RE:LNOI), which inherits nearly all the material advantages as well as nanophotonic integration from the LNOI technology, meets the urgent demands for chip‐integrated laser sources, optical amplifiers, and quantum memories based on LNOI photonics. In this article, a timely review is provided on the development of RE:LNOI photonics in terms of ion‐doping techniques, chip‐integrated lasers, and amplifiers, as well as low‐temperature optical characterizations for quantum photonics. To conclude, some well‐noted topics that may shape the future directions in lithium–niobate integrated photonics are discussed.
Solid‐state single‐photon sources in the infrared region are crucial for advancing quantum technologies, in particular long‐distance fiber or on‐chip quantum communication, quantum key distribution, quantum computing, quantum sensing and metrology, and fundamental research. The ability to generate and manipulate individual photons in the infrared spectrum is an area of expansion due to the availability of advanced material quality or new emerging materials. The latest advancements in the discovery and utilization of single‐photon sources in various material platforms and their foreseeable future development are here summarized.
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